Memory
1
2
3
ALGORITHM FOR PROGRAMMING
A ROW (64 BYTES) OF FLASH MEMORY
SET PGM BIT
READ THE FLASH BLOCK PROTECT REGISTER
WRITE ANY DATA TO ANY FLASH ADDRESS
WITHIN THE ROW ADDRESS RANGE DESIRED
4
5
6
WAIT FOR A TIME, tNVS
SET HVEN BIT
WAIT FOR A TIME, tPGS
7
8
WRITE DATA TO THE FLASH ADDRESS
TO BE PROGRAMMED
WAIT FOR A TIME, tPROG
COMPLETED
YES
PROGRAMMING
THIS ROW?
NO
10
CLEAR PGM BIT
WAIT FOR A TIME, tNVH
CLEAR HVEN BIT
11
12
Note:
The time between each FLASH address change (step 7 to step 7), or
the time between the last FLASH address programmed
to clearing PGM bit (step 7 to step 10)
must not exceed the maximum programming
time, tPROG max.
13
WAIT FOR A TIME, tRCV
END OF PROGRAMMING
This row program algorithm assumes the row/s
to be programmed are initially erased.
Figure 2-4. FLASH Programming Flowchart
Data Sheet
44
MC68HC908MR32 • MC68HC908MR16 — Rev. 6.0
MOTOROLA
Memory