Memory
FLASH Memory (FLASH)
2.8.1 FLASH Control Register
The FLASH control register (FLCR) controls FLASH program and erase
operations.
Address:
$FE08
Bit 7
0
6
0
5
0
4
0
3
HVEN
0
2
MASS
0
1
ERASE
0
Bit 0
PGM
0
Read:
Write:
Reset:
0
0
0
0
= Unimplemented
Figure 2-3. FLASH Control Register (FLCR)
HVEN — High-Voltage Enable Bit
This read/write bit enables the charge pump to drive high voltages for program
and erase operations in the array. HVEN can only be set if either PGM = 1 or
ERASE = 1 and the proper sequence for program or erase is followed.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
MASS — Mass Erase Control Bit
Setting this read/write bit configures the 32-Kbyte FLASH array for mass erase
operation. Mass erase is disabled if any FLASH block is protected
1 = MASS erase operation selected
0 = MASS erase operation unselected
ERASE — Erase Control Bit
This read/write bit configures the memory for erase operation. ERASE is
interlocked with the PGM bit such that both bits cannot be equal to 1 or set to 1
at the same time.
1 = Erase operation selected
0 = Erase operation unselected
PGM — Program Control Bit
This read/write bit configures the memory for program operation. PGM is
interlocked with the ERASE bit such that both bits cannot be equal to 1 or set
to 1 at the same time.
1 = Program operation selected
0 = Program operation unselected
MC68HC908MR32 • MC68HC908MR16 — Rev. 6.0
MOTOROLA
Data Sheet
41
Memory
FREESCALE [ Freescale ]
