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CMS4A16LAF 参数 Datasheet PDF下载

CMS4A16LAF图片预览
型号: CMS4A16LAF
PDF下载: 下载PDF文件 查看货源
内容描述: 128M ( 8Mx16 )低功耗SDRAM [128M(8Mx16) Low Power SDRAM]
分类和应用: 动态存储器
文件页数/大小: 46 页 / 616 K
品牌: FIDELIX [ FIDELIX ]
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CMS4A16LAx–75Ex  
Operation  
Figure 3. The starting column and bank addresses are provided  
with the READ command, and auto precharge is either enabled  
or disabled for that burst access. For the generic READ comm-  
ands used in the following illustrations, auto precharge is disab-  
led. During READ bursts, the valid data-out element from the  
starting column address will be available following the CAS  
latency after the READ command. Each subsequent data-out  
element will be valid by the next positive clock edge. Figure 2.  
shows general timing for each possible CAS latency setting.  
Upon completion of a burst, assuming no other commands  
have been initiated, the DQs will go High-Z. A full-page burst  
will continue until terminated. (The burst will wrap around at the  
end of the page). A continuous flow of data can be maintained  
by having additional Read Burst or single Read Command. The  
first data element from the new burst follows either the last  
element of a completed burst or the last desired data element of  
a longer burst that is being truncated.  
The new READ command should be issued x cycles before the  
clock edge at which the last desired data element is valid,  
where x equals the CAS latency minus one.  
This is shown in Figure 4. for CAS latencies of one, two and  
three; data element n + 3 is either the last of a burst of four or  
the last desired of a longer burst. Full-speed random read  
accesses can be performed to the same bank, as shown in  
Figure 5. , or each subsequent READ may be performed to a  
different bank.  
BANK / ROW ACTIVATION  
Before any READ or WRITE commands can be issued to a  
bank within the SDRAM, a row in that bank must be “opened”  
(activated). This is accomplished via the ACTIVE command,  
which selects both the bank and the row to be activated. A  
READ or WRITE command may then be issued to that row,  
subject to the tRCD specification. tRCD (MIN) should be divided  
by the clock period and rounded up to the next whole number to  
determine the earliest clock edge after the ACTIVE command  
on which a READ or WRITE command can be entered. For  
example, a tRCD specification of 20ns with a 125 MHz clock  
(8ns period) results in 2.5 clocks, rounded to 3. (The same  
procedure is used to convert other specification limits from time  
units to clock cycles.) A subsequent ACTIVE command to a  
different row in the same bank can only be issued after the  
previous active row has been “closed” (precharged). The  
minimum time interval between successive ACTIVE commands  
to the same bank is defined by tRC. A subsequent ACTIVE  
command to another bank can be issued while the first bank is  
being accessed, which results in a reduction of total row-access  
overhead. The minimum time interval between successive  
ACTIVE commands to different banks is defined by t tRRD  
.
READs  
READ bursts are initiated with a READ command, as shown in  
Read Command  
CLK  
CKE  
High  
/CS  
/RAS  
/CAS  
/WE  
Column  
Address  
A0-A8  
A9, A11  
Enable Auto Precharge  
Disable Auto Precharge  
A10  
Bank  
BA0, 1  
Address  
Don’t Care  
Figure 3. Read Command  
19  
Rev. 0.5, May. ‘07  
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