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CMS4A16LAF 参数 Datasheet PDF下载

CMS4A16LAF图片预览
型号: CMS4A16LAF
PDF下载: 下载PDF文件 查看货源
内容描述: 128M ( 8Mx16 )低功耗SDRAM [128M(8Mx16) Low Power SDRAM]
分类和应用: 动态存储器
文件页数/大小: 46 页 / 616 K
品牌: FIDELIX [ FIDELIX ]
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CMS4A16LAx–75Ex  
Table 8. IDD Specifications and Conditions [21.22.26.27.]  
Parameter  
.
Description  
-75  
Units  
Operating Current: Active Mode; Burst =2 ; Read or Write ; tRC tRC(min);  
CAS Latency =3 [28.29.30.] , tCK=10ns  
IDD  
1
50  
0.3  
10  
2
IDD2P  
IDD2N  
IDD3P  
IDD3N  
Precharge Standby Current in power down mode : CKE VIL(max) , tCK=10ns  
Precharge Standby Current in non power down mode : CKE VIH(min),  
/CS VIH(min) [28.29.30,31.] , tCK=10ns  
Active Standby Current in power down mode; CKE VIL(max) [28.29,30.31.], tCK=10ns  
Active Standby Current in non power down mode (One Bank Active);  
CKE VIH(min), /CS VIH(min) [28.29,30.31.], tCK=10ns  
20  
Operating Current: Burst Mode: Continuous Burst ; Read or Write : All banks  
Active, CAS Latency =3[28.29.30.] , tCK=10ns  
IDD  
IDD  
4
5
50  
Auto Refresh Current : tRC tRC(min), tCK=10ns  
Self Refresh Current : CKE 0.2V, 4 Banks, tCK= ∞  
Self Refresh Current : CKE 0.2V, 2 Banks , tCK= ∞  
Self Refresh Current : CKE 0.2V, 1 Banks, tCK= ∞  
120  
400  
300  
250  
IDD  
6
I
DD7  
Deep power down, tCK= ∞  
10  
Note :  
21. The minimum specifications are used only to indicate cycle time at which proper operation over the full temperature range (-40°C = TA = +85°C for IT parts) is ensured.  
22. An initial pause of 100µs is required after power-up, followed by two AUTO REFRESH commands, before proper device operation is ensured. (VDD and VDDQ must be  
powered up simultaneously. VSS and VSSQ must be at same potential.) The two AUTO REFRESH command wake-ups should be repeated any time the tREF refresh  
requirement is exceeded.  
23. All states and sequences not shown are illegal or reserved.  
24. In addition to meeting the transition rate specification, the clock and CKE must transit between VIH and VIL (or between VIL and VIH) in a monotonic manner.  
25. tHZ defines the time at which the output achieves the open circuit condition; it is not a reference to VOH or VOL. The last valid data element will meet tOH before going High-Z.  
26. AC timing and IDD tests have VIL and VIH, with timing referenced to VIH/2 = crossover point. If the input transition time is longer than tT (MAX), then the timing is referenced  
at VIL (MAX) and VIH (MIN) and no longer at the VIH/2 crossover point.  
27. IDD specifications are tested after the device is properly initialized.  
28. IDD is dependent on output loading and cycle rates. Specified values are obtained with minimum cycle time and the outputs open.  
29. The IDD current will increase or decrease proportionally according to the amount of frequency alteration for the test condition.  
30. Input signals are changed one time during 20ns.  
31. Unless otherwise note, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ).  
32. CKE is HIGH during refresh command period tRFC (MIN) else CKE is LOW. The IDD 6 limit is actually a nominal value and does not result in a fail value  
Capacitance[]  
Parameter  
CIN  
Description  
Test Conditions  
Max  
4
Units  
pF  
Input Capacitance  
Output Capacitance  
TA=25, f=1Mhz, VDD(typ)  
COUT  
6
pF  
VDDQ/2  
AC Test Loads  
50Ω  
Z0=50Ω  
OUTPUT  
30pF  
16  
Rev. 0.5, May. ‘07  
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