CMS4A16LAx–75Ex
AC Characteristics
AC Characteristics
Parameter
-75
Symbol
Units
Min
7.5
10
3
Max
tCLKS3
tCLKS2
tCH
ns
Clock Period[33.]
Clock High Time
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
ns
tCK
ns
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ns
tCK
tCK
Clock Low Time
tCL
3
Address Setup Time to Clock
Address Hold Time to Clock
CKE Setup Time to Clock
CKE Hold Time to Clock
tCAS
2.0
1.0
2.0
1.0
tCAH
tCKS
tCKH
tAC(3)
tAC(2)
tAC(1)
tOH
CL=3
CL=2
CL=1
7
8
Clock Access Time[34, 35]
22
Output Hold Time from Clock
Data In Setup Time to Clock
Data In Hold Time to Clock
2.5
2.0
1.0
2.0
1.0
3
tCDS
tCDH
tCMS
tCMH
tHZ
/CS, /RAS, /CAS, /WE, /DQM Setup Time to Clock
/CS, /RAS, /CAS, /WE, /DQM Hold Time to Clock
Data High Impedance Time[25.]
8
Active to Precharge Command
tRAS
48
80
20
120000
Active to Active Command Period
Active to Read/Write Delay
tRC
tRCD
tREF
Refresh Period(4096 rows)
64
Auto Refresh Period
tRFC
80
Auto Refresh Period(in a burst)
tRFC(burst refresh)
tRP
tRRD
tT
160
Precharge Command Period
20
Active Banka to Active Bankb Command
Transition Time[36.]
15
0.5
1.2
Write Recovery Time[37.]
tWR
1tCK + 3ns
Exit Self Refresh to Active Command[38.]
READ/WRITE command to READ/WRITE command[39.]
CKE to clock disable or power-down entry mode[40.]
CKE to clock enable or power-down exit setup mode[40.]
DQM to input data delay[39.]
tXSR
80
1
1
1
0
0
2
0
4
1
1
tCCD
tCKED
tPED
tDQD
tDQM
tDQZ
tDWD
tDAL
DQM to data mask during WRITEs[39.]
DQM to data high-impedance during READs[39.]
WRITE command to input data delay[39.]
Data-in to ACTIVE command[41.]
Data-in to PRECHARGE command[42.]
Last data-in to burst STOP command[39.]
tDPL
tBDL
17
Rev. 0.5, May. ‘07
FIDELIX [ FIDELIX ]
