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M14D5121632A-2.5BIG2H 参数 Datasheet PDF下载

M14D5121632A-2.5BIG2H图片预览
型号: M14D5121632A-2.5BIG2H
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-84]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 62 页 / 1001 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M14D5121632A (2H)  
Operation Temperature Condition (TC) -40°C~95°C  
Read Interrupted by a Read  
Burst Read can only be interrupted by another read with 4 bit burst boundary. Any other case of read interrupt is not allowed.  
< CL= 3; AL= 0; RL= 3; BL= 8 >  
CLK  
CLK  
CMD  
NOP  
NOP  
READ B  
NOP  
NOP  
NOP  
READ A  
NOP  
NOP  
NOP  
DQS,DQS  
DQs  
A3  
A0  
A1  
B1  
B2  
B3  
B0  
B6  
B7  
A2  
B4  
B5  
Note:  
1. Read burst interrupt function is only allowed on burst of 8. Burst interrupt of 4 is prohibited.  
2. Read burst of 8 can only be interrupted by another Read command. Read burst interruption by Write  
command or Precharge command is prohibited.  
3. Read burst interrupt must occur exactly two clocks after previous Read command. Any other Read burst  
interrupt timings are prohibited.  
4. Read burst interruption is allowed to any bank inside DRAM.  
5. Read burst with Auto Precharge enabled is not allowed to interrupt.  
6. Read burst interruption is allowed by another Read with Auto Precharge command.  
7. All command timings are referenced to burst length set in the mode register. They are not referenced to  
actual burst. For example, Minimum Read to Precharge timing is AL + BL/2 where BL is the burst length  
set in the MRS and not the actual burst (which is shorter because of interrupt).  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Aug. 2011  
Revision : 1.1 43/62  
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