ESMT
M14D5121632A (2H)
Operation Temperature Condition (TC) -40°C~95°C
Burst Read Followed by Precharge
Minimum Read to Precharge command spacing to the same bank = AL + BL/2 + max(tRTP, 2) - 2 clocks.
For the earliest possible Precharge, the Precharge command may be issued on the rising edge which is “Additive latency (AL) +
BL/2 clocks” after a Read command. A new Bank Active command may be issued to the same bank after the Precharge time (tRP).
A Precharge command cannot be issued until tRAS is satisfied.
The minimum Read to Precharge spacing has also to satisfy a minimum analog time from the rising clock edge that initiates the
last 4-bit prefetch of a Read to Precharge command. This time is called tRTP (Read to Precharge). For BL = 4, this is the time from
the actual read (AL after the Read command) to Precharge command. For BL = 8, this is the time from AL + 2 clocks after the Read
to the Precharge command.
< RL= 4 (AL= 1; CL= 3) >
T4
T0
T1
T2
T5
T6
T7
T8
T3
CLK
CLK
Bank A
Active
Posted CAS
READ A
CMD
Precharge
NOP
NOP
NOP
NOP
NOP
NOP
AL + BL/2 clks
BL = 4
DQS,DQS
DQs
>= tRP
CL = 3
AL = 1
RL = 4
DoutA0 DoutA1
DoutA3
DoutA2
>= tRAS
>= tRTP
CL = 3
Posted CAS
READ A
Precharge A
CMD
NOP
NOP
NOP
NOP
NOP
NOP
NOP
AL + BL/2 clks
DQS,DQS
DQs
BL = 8
CL = 3
AL = 1
RL = 4
DoutA4 DoutA5
DoutA7
DoutA0 DoutA1
DoutA3
DoutA6
DoutA2
>= tRTP
< RL= 5 (AL= 2; CL= 3); BL= 4 >
T4
T0
T1
T2
T5
T6
T7
T8
T3
CLK
CLK
Bank A
Active
Posted CAS
READ A
CMD
Precharge A
NOP
NOP
NOP
NOP
NOP
NOP
AL + BL/2 clks
>= tRP
DQS,DQS
DQs
AL = 2
RL = 5
CL = 3
DoutA0 DoutA1
DoutA3
DoutA2
>= tRAS
CL = 3
>= tRTP
< RL= 6 (AL= 2; CL= 4); BL= 4 >
T4
T0
T1
T2
T5
T6
T7
T8
T3
CLK
CLK
Bank A
Active
Posted CAS
READ A
CMD
Precharge A
NOP
NOP
NOP
NOP
NOP
NOP
AL + BL/2 clks
>= tRP
DQS,DQS
DQs
AL = 2
CL = 4
RL = 6
DoutA0 DoutA1
DoutA3
DoutA2
>= tRAS
CL = 4
>= tRTP
Elite Semiconductor Memory Technology Inc.
Publication Date : Aug. 2011
Revision : 1.1 45/62
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
