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M14D5121632A-2.5BIG2H 参数 Datasheet PDF下载

M14D5121632A-2.5BIG2H图片预览
型号: M14D5121632A-2.5BIG2H
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-84]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 62 页 / 1001 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M14D5121632A (2H)  
Operation Temperature Condition (TC) -40°C~95°C  
Burst Write Operation  
The Burst Write command is issued by having CS , CAS and WE LOW while holding RAS HIGH at the rising edge of the  
clock (CLK). The address inputs determine the starting column address. Write latency (WL) is defined by a read latency (RL) minus  
one and is equal to (AL + CL -1); and is the number of clocks of delay that are required from the time the write command is  
registered to the clock edge associated to the first DQS strobe. A data strobe signal (DQS) should be driven low (preamble) one  
clock prior to the WL. The first data bit of the burst cycle must be applied to the DQ pins at the first rising edge of the DQS following  
the preamble. The tDQSS specification must be satisfied for each positive DQS transition to its associated clock edge during write  
cycles. The subsequent burst bit data are issued on successive edges of the DQS until the burst length is completed, which is 4 or  
8 bit burst. When the burst has finished, any additional data supplied to the DQ pins will be ignored. The DQ signal is ignored after  
the burst write operation is complete. The time from the completion of the burst write to bank precharge is the write recovery time  
(tWR).  
Write (Data Input) Timing  
tDQSL  
t
DQSH  
DQS  
DQS  
DQS  
DQS  
t
WPST  
tWPRE  
Din3  
Din2  
DQ  
DM  
Din1  
Din0  
t
DH  
tDH  
t
DS  
tDS  
Burst Write  
< RL= 5 (AL= 2; CL= 3); WL= 4; BL= 4 >  
T4  
T0  
T1  
T2  
T5  
T6  
T7  
Tn  
T3  
CLK  
CLK  
Posted CAS  
WRITE A  
CMD  
Precharge  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
Case1 : with tDQSS(max)  
DQS,DQS  
t
DQSS  
WL = RL -1 = 4  
t
DSS  
>= tWR  
>= tWR  
DQs  
DinA0 DinA1 DinA2 DinA3  
DSH  
t
t
DQSS  
Case2 : with tDQSS(min)  
DQS,DQS  
WL = RL -1 = 4  
DQs  
DinA0 DinA1 DinA2 DinA3  
< RL= 3 (AL= 0; CL= 3); WL= 2; BL= 4 >  
T4  
T0  
T1  
T2  
T5  
T6  
T7  
Tn  
T3  
CLK  
CLK  
Bank A  
Active  
Precharge  
CMD  
NOP  
NOP  
NOP  
WRITE A  
NOP  
NOP  
NOP  
t
DQSS  
DQS,DQS  
WL = RL -1 = 2  
>= tRP  
t
WR  
DQs  
DinA0 DinA1 DinA2 DinA3  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Aug. 2011  
Revision : 1.1 41/62  
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