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M14D5121632A-2.5BIG2H 参数 Datasheet PDF下载

M14D5121632A-2.5BIG2H图片预览
型号: M14D5121632A-2.5BIG2H
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-84]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 62 页 / 1001 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M14D5121632A (2H)  
Operation Temperature Condition (TC) -40°C~95°C  
Write data mask by DM  
One write data mask (DM) pin for each 8 data bits (DQ) will be supported on DDR2 SDRAM, Consistent with the implementation  
on DDR2 SDRAM. It has identical timings on write operations as the data bits, and though used in a uni-directional manner, is  
internally loaded identically to data bits to insure matched system timing. DM is not used during read cycles.  
Data Mask Timing  
T4  
T1  
T2  
T5  
Tn  
T3  
DQS  
DQS  
Din  
Dn  
Din Din  
Din  
Din  
Din  
Din Din  
DQ  
DM  
Write mask Iatency = 0  
Example: < WL= 3; AL= 0; BL= 4 >  
T4  
T0  
T1  
T2  
T5  
T6  
T7  
T8  
T3  
CLK  
CLK  
tWR  
NOP  
WL  
WRIT  
Command  
[tDQSS(min.)  
DQS,DQS  
]
t
DQSS  
DQ  
DM  
Din0  
Din2  
WL  
[tDQSS(max.)  
DQS,DQS  
]
tDQSS  
Din0  
Din2  
DQ  
DM  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Aug. 2011  
Revision : 1.1 47/62  
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