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M12L16161A-6T 参数 Datasheet PDF下载

M12L16161A-6T图片预览
型号: M12L16161A-6T
PDF下载: 下载PDF文件 查看货源
内容描述: 512K X 16位X 2Banks同步DRAM [512K x 16Bit x 2Banks Synchronous DRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器时钟
文件页数/大小: 27 页 / 568 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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M12L16161A  
Self Refresh Entry & Exit Cycle  
3
6
0
1
2
11  
13  
4
8
9
10  
1 2  
1 7  
5
7
1 4  
15  
1 6  
18  
19  
C L O C K  
* N o t e 2  
* N o t e 4  
t R C m i n  
* N o t e 6  
* N o t e 1  
*Note3  
C K E  
C S  
t S S  
* N o t e 5  
R A S  
C A S  
* N o t e 7  
A D D R  
B A  
A 1 0 / A P  
H i - Z  
H i - Z  
DQ  
W E  
D Q M  
S e l f R e f r e s h E x i t  
S e l f R e f r e s h E n t r y  
A u t o R e f r e s h  
:
D o n ' t c a r e  
*Note: TO ENTER SELF REFRESH MODE  
1. CS , RAS & CAS with CKE should be low at the same clock cycle.  
2.After 1 clock cycle, all the inputs including the system clock can be don’t care except for CKE.  
3.The device remains in self refresh mode as long as CKE stays “Low”.  
cf.) Once the device enters self refresh mode, minimum RAS is required before exit from self refresh.  
t
TO EXIT SELF REFRESH MODE  
4.System clock restart and be stable before returning CKE high.  
5. CS Starts from high.  
6.Minimum tRC is required after CKE going high to complete self refresh exit.  
7.2K cycle of burst auto refresh is required before self refresh entry and after self refresh exit if the system uses burst  
refresh.  
:
Publication Da te J an. 2000  
Elite Semiconductor Memory Technology Inc.  
P.25  
:
Revis ion 1.3u  
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