HM5225165B/HM5225805B/HM5225405B-75/A6/B6
Write command to Read command interval:
1. Same bank, same ROW address: When the read command is executed at the same ROW address of the
same bank as the preceding write command, the read command can be performed after an interval of no less
than 1 clock. However, in the case of a burst write, data will continue to be written until one clock before the
read command is executed.
WRITE to READ Command Interval (1)
CLK
Command
WRIT
in A0
READ
DQM,
DQMU/DQML
Din
Dout
out B0
out B1
out B2
out B3
Column = A
Write
Burst Write Mode
CAS Latency = 2
Burst Length = 4
Bank 0
CAS Latency
Column = B
Dout
Column = B
Read
WRITE to READ Command Interval (2)
CLK
WRIT
in A0
READ
Command
DQM,
DQMU/DQML
Din
in A1
Dout
out B0
out B1
out B2
out B3
Burst Write Mode
CAS Latency = 2
Burst Length = 4
Bank 0
Column = A
Write
CAS Latency
Column = B
Dout
Column = B
Read
2. Same bank, different ROW address: When the ROW address changes, consecutive read commands
cannot be executed; it is necessary to separate the two commands with a precharge command and a bank-
active command.
3. Different bank: When the bank changes, the read command can be performed after an interval of no less
than 1 clock, provided that the other bank is in the bank-active state. However, in the case of a burst write,
data will continue to be written until one clock before the read command is executed (as in the case of the
same bank and the same address).
Data Sheet E0082H10
30
ELPIDA [ ELPIDA MEMORY ]
