HM5225165B/HM5225805B/HM5225405B-75/A6/B6
Write command to Write command interval:
1. Same bank, same ROW address: When another write command is executed at the same ROW address
of the same bank as the preceding write command, the second write can be performed after an interval of no
less than 1 clock. In the case of burst writes, the second write command has priority.
WRITE to WRITE Command Interval (same ROW address in same bank)
CLK
Command
Address
WRIT
ACTV
Row
WRIT
Column B
Column A
BS
Din
in A0
in B2 in B3
in B0 in B1
Bank0
Active
Column =A Column =B
Write Write
Burst Write Mode
Burst Length = 4
Bank 0
2. Same bank, different ROW address: When the ROW address changes, consecutive write commands
cannot be executed; it is necessary to separate the two write commands with a precharge command and a
bank-active command.
3. Different bank: When the bank changes, the second write can be performed after an interval of no less
than 1 clock, provided that the other bank is in the bank-active state. In the case of burst write, the second
write command has priority.
WRITE to WRITE Command Interval (different bank)
CLK
Command
Address
ACTV
Row 0
ACTV
WRIT WRIT
Column A
Column B
Row 1
BS
Din
in A0
in B2 in B3
in B0 in B1
Burst Write Mode
Burst Length = 4
Bank0
Active
Bank3 Bank0 Bank3
Active Write Write
Data Sheet E0082H10
28
ELPIDA [ ELPIDA MEMORY ]
