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HM5225805BLTT-75 参数 Datasheet PDF下载

HM5225805BLTT-75图片预览
型号: HM5225805BLTT-75
PDF下载: 下载PDF文件 查看货源
内容描述: LVTTL 256M SDRAM接口的133 MHz / 100 MHz的4 Mword 】 16位】 4银行/ 8 - Mword 】 8位】 4银行/ 16 Mword 】 4位】 4银行PC / 133 , PC / 100 SDRAM [256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器PC时钟
文件页数/大小: 63 页 / 454 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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HM5225165B/HM5225805B/HM5225405B-75/A6/B6  
Read command to Precharge command interval (same bank):  
When the precharge command is executed for the same bank as the read command that preceded it, the  
minimum interval between the two commands is one clock. However, since the output buffer then becomes  
High-Z after the clocks defined by lHZP, there is a case of interruption to burst read data output will be  
interrupted, if the precharge command is input during burst read. To read all data by burst read, the clocks  
defined by lEP must be assured as an interval from the final data output to precharge command execution.  
READ to PRECHARGE Command Interval (same bank): To output all data  
CAS Latency = 2, Burst Length = 4  
CLK  
PRE/PALL  
out A2  
READ  
Command  
Dout  
out A0  
out A1  
out A3  
CL=2  
l
= -1 cycle  
EP  
CAS Latency = 3, Burst Length = 4  
CLK  
PRE/PALL  
out A1  
READ  
Command  
Dout  
out A0  
out A2  
out A3  
CL=3  
l
= -2 cycle  
EP  
Data Sheet E0082H10  
34  
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