HM5225165B/HM5225805B/HM5225405B-75/A6/B6
Read command to Write command interval:
1. Same bank, same ROW address: When the write command is executed at the same ROW address of the
same bank as the preceding read command, the write command can be performed after an interval of no less
than 1 clock. However, DQM, DQMU/DQML must be set High so that the output buffer becomes High-Z
before data input.
READ to WRITE Command Interval (1)
CLK
Command
READ WRIT
DQM, CL=2
DQMU
/DQML
CL=3
in B0
in B3
in B1 in B2
Din
Burst Length = 4
Burst write
High-Z
Dout
READ to WRITE Command Interval (2)
CLK
Command
READ
WRIT
DQM,
DQMU/DQML
2 clock
High-Z
High-Z
CL=2
Dout
CL=3
Din
2. Same bank, different ROW address: When the ROW address changes, consecutive write commands
cannot be executed; it is necessary to separate the two commands with a precharge command and a bank-
active command.
3. Different bank: When the bank changes, the write command can be performed after an interval of no less
than 1 cycle, provided that the other bank is in the bank-active state. However, DQM, DQMU/DQML must
be set High so that the output buffer becomes High-Z before data input.
Data Sheet E0082H10
29
ELPIDA [ ELPIDA MEMORY ]
