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HM5225805BLTT-75 参数 Datasheet PDF下载

HM5225805BLTT-75图片预览
型号: HM5225805BLTT-75
PDF下载: 下载PDF文件 查看货源
内容描述: LVTTL 256M SDRAM接口的133 MHz / 100 MHz的4 Mword 】 16位】 4银行/ 8 - Mword 】 8位】 4银行/ 16 Mword 】 4位】 4银行PC / 133 , PC / 100 SDRAM [256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器PC时钟
文件页数/大小: 63 页 / 454 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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HM5225165B/HM5225805B/HM5225405B-75/A6/B6  
Read with auto precharge to Write command interval  
1. Different bank: When some banks are in the active state, the second write command (another bank) is  
executed. However, DQM, DQMU/DQML must be set High so that the output buffer becomes High-Z before  
data input. The internal auto-precharge of one bank starts at the next clock of the second command.  
Read with Auto Precharge to Write Command Interval (Different bank)  
CLK  
Command  
BS  
READ A WRIT  
CL = 2  
CL = 3  
Din  
DQM,  
DQMU/DQML  
in B0  
in B1  
in B2  
in B3  
Dout  
High-Z  
Burst Length = 4  
bank0  
bank3  
Read A Write  
Note: Internal auto-precharge starts at the timing indicated by "  
".  
2. Same bank: The consecutive write command from read with auto precharge (the same bank) is illegal. It  
is necessary to separate the two commands with a bank active command.  
Data Sheet E0082H10  
32  
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