HM51W16165 Series, HM51W18165 Series
Write Cycle
HM51W16165/HM51W18165
-5
-6
-7
Parameter
Symbol Min
Max Min
Max Min
Max Unit
Notes
14, 21
21
Write command setup time
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data-in setup time
tWCS
tWCH
tWP
0
8
8
8
8
0
8
—
—
—
—
—
—
—
0
—
—
—
—
—
—
—
0
—
—
—
—
—
—
—
ns
ns
ns
ns
ns
ns
ns
10
10
10
10
0
13
10
13
13
0
tRWL
tCWL
tDS
23
15, 23
15, 23
Data-in hold time
tDH
10
13
Read-Modify-Write Cycle
HM51W16165/HM51W18165
-5
Symbol Min
-6
-7
Parameter
Max Min
Max Min
Max Unit
Notes
Read-modify-write cycle time
RAS to WE delay time
CAS to WE delay time
tRWC
tRWD
tCWD
111
67
30
42
13
—
—
—
—
—
135
79
34
49
15
—
—
—
—
—
161
92
40
57
18
—
—
—
—
—
ns
ns
ns
ns
ns
14
14
14
Column address to WE delay time tAWD
OE hold time from WE
tOEH
Refresh Cycle
HM51W16165/HM51W18165
-5
Symbol Min
-6
-7
Parameter
Max Min
Max Min
Max Unit
Notes
21
CAS setup time (CBR refresh cycle) tCSR
CAS hold time (CBR refresh cycle) tCHR
5
8
5
—
—
—
5
—
—
—
5
—
—
—
ns
ns
ns
10
5
10
5
22
RAS precharge to CAS hold time
tRPC
21
Data Sheet E0153H10
13
ELPIDA [ ELPIDA MEMORY ]
