HM51W16165 Series, HM51W18165 Series
DC Characteristics
(Ta = 0 to +70°C, VCC = 3.3 V ± 0.3 V, VSS = 0 V) (HM51W18165 Series)
HM51W18165
-5
-6
-7
Parameter
Symbol Min Max Min Max Min Max Unit
Test conditions
Operating current*1, *2
ICC1
ICC2
—
—
190 —
170 — 150 mA
tRC = min
Standby current
2
—
2
—
2
mA
TTL interface
RAS, UCAS, LCAS = VIH
Dout = High-Z
—
—
1
—
1
—
1
mA
CMOS interface
RAS, UCAS,
LCAS ≥ VCC – 0.2 V
Dout = High-Z
Standby current
(L-version)
ICC2
150 —
190 —
150 — 150 µA
170 — 150 mA
CMOS interface
RAS, UCAS,
LCAS ≥ VCC – 0.2 V
Dout = High-Z
RAS-only refresh current*2
Standby current*1
ICC3
ICC5
—
—
tRC = min
5
—
5
—
5
mA
RAS = VIH
UCAS, LCAS = VIL
Dout = enable
CAS-before-RAS refresh
current
ICC6
—
190 —
170 — 150 mA
tRC = min
EDO page mode current*1, *3 ICC7
—
—
185 —
400 —
165 — 145 mA
400 — 400 µA
tHPC = min
Battery backup current*4
(Standby with CBR refresh)
(L-version)
ICC10
CMOS interface
Dout = High-Z
CBR refresh: tRC = 125
µs
t
RAS ≤ 0.3 µs
Self refresh mode current
(L-version)
ICC11
—
250 —
250 — 250 µA
CMOS interface
RAS, UCAS,
LCAS ≤ 0.2 V
Dout = High-Z
Input leakage current
Output leakage current
ILI
–10 10 –10 10 –10 10 µA
–10 10 –10 10 –10 10 µA
0 V ≤ Vin ≤ 4.6 V
ILO
0 V ≤ Vout ≤ 4.6 V
Dout = disable
Output high voltage
Output low voltage
VOH
VOL
2.4 VCC 2.4 VCC 2.4 VCC
0.4 0.4 0.4
V
V
High Iout = –2 mA
Low Iout = 2 mA
0
0
0
Notes: 1. ICC depends on output load condition when the device is selected. ICC max is specified at the
output open condition.
2. Address can be changed once or less while RAS = VIL.
3. Address can be changed once or less while UCAS and LCAS = VIH.
4. VIH ≥ VCC – 0.2 V, 0 V ≤ VIL ≤ 0.2 V.
Data Sheet E0153H10
9
ELPIDA [ ELPIDA MEMORY ]
