HM51W16165 Series, HM51W18165 Series
EDO Page Mode Cycle
HM51W16165/HM51W18165
-5 -6 -7
Symbol Min Max Min Max Min Max
25 30
100000 —
Parameter
Unit
Notes
25
EDO page mode cycle time
tHPC
20
—
—
30
3
—
—
—
ns
EDO page mode RAS pulse width tRASP
Access time from CAS precharge tCPA
100000 — 100000 ns
16
30
—
—
—
—
—
—
35
3
35
—
—
—
—
—
—
40
3
40
—
—
—
—
—
ns
ns
ns
ns
ns
ns
9, 17, 22
RAS hold time from CAS precharge tCPRH
Output data hold time from CAS low tDOH
9
CAS hold time referred OE
CAS to OE setup time
tCOL
8
10
5
13
5
tCOP
tRCHC
5
Read command hold time from
30
35
40
CAS precharge
EDO Page Mode Read-Modify-Write Cycle
HM51W16165/HM51W18165
-5
Symbol Min
-6
-7
Parameter
Max Min
Max Min
Max Unit
Notes
EDO page mode read-modify-write tHPRWC
cycle time
57
—
68
—
79
—
ns
WE delay time from CAS precharge tCPW
45
—
54
—
62
—
ns
14, 22
Refresh (HM51W16165 Series)
Parameter
Symbol
tREF
Max
64
Unit
Note
Refresh period
ms
ms
4096 cycles
4096 cycles
Refresh period (L-version)
tREF
128
Refresh (HM51W18165 Series)
Parameter
Symbol
tREF
Max
16
Unit
ms
Note
Refresh period
1024 cycles
1024 cycles
Refresh period (L-version)
tREF
128
ms
Data Sheet E0153H10
14
ELPIDA [ ELPIDA MEMORY ]
