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HM51W16165LTT-5 参数 Datasheet PDF下载

HM51W16165LTT-5图片预览
型号: HM51W16165LTT-5
PDF下载: 下载PDF文件 查看货源
内容描述: 16M的EDO DRAM ( 1 - Mword ×16位), 4K的刷新/ 1千刷新 [16 M EDO DRAM (1-Mword x 16-bit) 4 k Refresh/1 k Refresh]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 35 页 / 598 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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HM51W16165 Series, HM51W18165 Series  
Self Refresh Mode (L-version)  
HM51W16165L/HM51W18165L  
-5  
-6  
-7  
Parameter  
Symbol Min  
Max Min  
Max Min  
Max Unit  
Notes  
RAS pulse width (self refresh)  
tRASS  
100  
100  
100  
µs  
28, 29, 30,  
31  
RAS precharge time (self refresh) tRPS  
CAS hold time (self refresh) tCHS  
90  
110  
–50  
130  
–50  
ns  
ns  
–50  
Notes: 1. AC measurements assume tT = 2 ns.  
2. An initial pause of 200 µs is required after power up followed by a minimum of eight initialization  
cycles (any combination of cycles containing RAS-only refresh or CAS-before-RAS refresh).  
3. Operation with the tRCD (max) limit insures that tRAC (max) can be met, tRCD (max) is specified as a  
reference point only; if tRCD tRAD (max) + tAA (max) – tCAC (max), then access time is controlled  
exclusively by tCAC  
.
4. Operation with the tRAD (max) limit insures that tRAC (max) can be met, tRAD (max) is specified as a  
reference point only; if tRAD is greater than the specified tRAD (max) limit, then access time is  
controlled exclusively by tAA.  
5. Either tOED or tCDD must be satisfied.  
6. Either tDZO or tDZC must be satisfied.  
7. VIH (min) and VIL (max) are reference levels for measuring timing of input signals. Also, transition  
times are measured between VIH (min) and VIL (max).  
8. Assumes that tRCD tRCD (max) and tRAD tRAD (max). If tRCD or tRAD is greater than the maximum  
recommended value shown in this table, tRAC exceeds the value shown.  
9. Measured with a load circuit equivalent to 1 TTL loads and 100 pF.  
10. Assumes that tRCD tRCD (max) and tRCD + tCAC (max) tRAD + tAA (max).  
11. Assumes that tRAD tRAD (max) and tRCD + tCAC (max) tRAD + tAA (max).  
12. Either tRCH or tRRH must be satisfied for a read cycles.  
13. tOFF (max) and tOEZ (max) define the time at which the outputs achieve the open circuit condition  
and are not referred to output voltage levels.  
14. tWCS, tRWD, tCWD, tAWD and tCPW are not restrictive operating parameters. They are included in the  
data sheet as electrical characteristics only; if tWCS tWCS (min), the cycle is an early write cycle  
and the data out pin will remain open circuit (high impedance) throughout the entire cycle; if tRWD  
tRWD (min), tCWD tCWD (min), and tAWD tAWD (min), or tCWD tCWD (min), tAWD tAWD (min) and tCPW  
tCPW (min), the cycle is a read-modify-write and the data output will contain data read from the  
selected cell; if neither of the above sets of conditions is satisfied, the condition of the data out  
(at access time) is indeterminate.  
15. These parameters are referred to UCAS and LCAS leading edge in early write cycles and to WE  
leading edge in delayed write or read-modify-write cycles.  
16. tRASP defines RAS pulse width in EDO page mode cycles.  
17. Access time is determined by the longest among tAA, tCAC and tCPA  
.
18. In delayed write or read-modify-write cycles, OE must disable output buffer prior to applying data  
to the device  
19. When both UCAS and LCAS go low at the same time, all 16-bit data are written into the device.  
UCAS and LCAS cannot be staggered within the same write/read cycles.  
20 All the VCC and VSS pins shall be supplied with the same voltages.  
Data Sheet E0153H10  
15  
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