HM51W16165 Series, HM51W18165 Series
AC Characteristics (Ta = 0 to +70°C, VCC = 3.3 V ± 0.3 V, VSS = 0 V)*1, *2, *18, *19, *20
Test Conditions
•
•
•
•
•
Input rise and fall time: 2 ns
Input levels: 0 V, 3.0 V
Input timing reference levels: 0.8 V, 2.0 V
Output timing reference levels: 0.8 V, 2.0 V
Output load: 1 TTL gate + CL (100 pF) (Including scope and jig)
Read, Write, Read-Modify-Write and Refresh Cycles (Common parameters)
HM51W16165/HM51W18165
-5
-6
-7
Parameter
Symbol Min Max Min Max Min Max Unit
Notes
Random read or write cycle time
RAS precharge time
CAS precharge time
RAS pulse width
tRC
84
30
8
—
—
—
104
40
—
—
—
124
50
—
—
—
ns
ns
ns
tRP
tCP
10
13
tRAS
tCAS
tASR
tRAH
tASC
tCAH
tRCD
50
8
10000 60
10000 10
10000 70
10000 13
10000 ns
10000 ns
CAS pulse width
Row address setup time
Row address hold time
Column address setup time
Column address hold time
RAS to CAS delay time
0
—
—
—
—
37
25
—
—
—
—
—
—
50
0
—
—
—
—
45
30
—
—
—
—
—
—
50
0
—
—
—
—
52
35
—
—
—
—
—
—
50
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
8
10
0
10
0
0
21
21
3
8
10
14
12
13
40
5
13
14
12
13
45
5
12
10
10
35
5
RAS to column address delay time tRAD
4
RAS hold time
tRSH
tCSH
tCRP
tOED
tDZO
tDZC
tT
CAS hold time
23
22
5
CAS to RAS precharge time
OE to Din delay time
OE delay time from Din
CAS delay time from Din
Transition time (rise and fall)
13
0
15
0
18
0
6
0
0
0
6
2
2
2
7
Data Sheet E0153H10
11
ELPIDA [ ELPIDA MEMORY ]
