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EDD1208ALTA-7A 参数 Datasheet PDF下载

EDD1208ALTA-7A图片预览
型号: EDD1208ALTA-7A
PDF下载: 下载PDF文件 查看货源
内容描述: 128 M位同步DRAM是双倍数据速率( 4 -银行, SSTL_2 ) [128 M-bit Synchronous DRAM with Double Data Rate (4-bank, SSTL_2)]
分类和应用: 存储内存集成电路光电二极管动态存储器双倍数据速率时钟
文件页数/大小: 78 页 / 1650 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDD1204ALTA, EDD1208ALTA, EDD1216ALTA  
12.3 Terminating a Burst Write Cycle by Precharge Command  
During a burst write cycle without auto precharge, the burst write operation is terminated by a precharge command  
of the same banks. In order to write the last input data to the memory cell correctly, tWR (MIN.) must be satisfied. When  
the precharge command is issued at the rising edge of the clock (CLK), the invalid data from the burst write cycle  
must be masked by DM.  
Burst length = 8  
T0  
T1  
T2  
T3  
T4  
T5  
t
WR  
CLK  
/CLK  
CKE  
/CAS latency = 2, 2.5  
Command  
WRITE  
PRE  
DQS  
DQ  
D1  
D2  
DM  
36  
Preliminary Data Sheet E0136E30  
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