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EDD1208ALTA-7A 参数 Datasheet PDF下载

EDD1208ALTA-7A图片预览
型号: EDD1208ALTA-7A
PDF下载: 下载PDF文件 查看货源
内容描述: 128 M位同步DRAM是双倍数据速率( 4 -银行, SSTL_2 ) [128 M-bit Synchronous DRAM with Double Data Rate (4-bank, SSTL_2)]
分类和应用: 存储内存集成电路光电二极管动态存储器双倍数据速率时钟
文件页数/大小: 78 页 / 1650 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDD1204ALTA, EDD1208ALTA, EDD1216ALTA  
11.4 Read to Write Command Interval  
To interrupt the burst read operation using the write command, the burst stop command must be issued to avoid  
data conflict. The data bus must be high impedance when the write command is issued.  
When the write command is issued, any residual data from the burst read cycle must be terminated by the burst  
stop command. When /CAS latency is 2, 2.5, the burst stop command must be issued at least 2 cycles prior to the  
write command.  
T0  
T1  
T2  
T0  
T3  
T4  
T1  
T5  
T6  
T2  
T7  
T8  
T3  
T9  
T10  
T4  
T11  
T12  
T5  
T13  
T14  
Burst length = 8  
T6  
CLK  
/CLK  
CKE  
/CAS latency = 2  
BST  
Command  
READ A  
WRITE B  
Hi-Z  
Hi-Z  
DQS  
DQ  
QA1  
QA2  
QA3  
QA4  
DB1  
DB2  
DB  
/CAS latency = 2.5  
Command  
READ A  
BST  
WRITE B  
Hi-Z  
DQS  
DQ  
Hi-Z  
DB  
QA1  
QA2  
QA3  
QA4  
DB1  
DB2  
DQ and DQS : Output  
DQ and DQS : Input  
33  
Preliminary Data Sheet E0136E30  
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