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CY7C1361B-133BGC 参数 Datasheet PDF下载

CY7C1361B-133BGC图片预览
型号: CY7C1361B-133BGC
PDF下载: 下载PDF文件 查看货源
内容描述: 9兆位( 256K ×36 / 512K ×18 )流通型SRAM [9-Mbit (256K x 36/512K x 18) Flow-Through SRAM]
分类和应用: 静态存储器
文件页数/大小: 34 页 / 820 K
品牌: CYPRESS [ CYPRESS ]
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CY7C1361B  
CY7C1363B  
CY7C1361B–Pin Definitions (continued)  
TQFP  
(3-Chip  
Enable)  
TQFP  
(2-Chip  
Enable)  
BGA  
fBGA  
(3-Chip  
Enable)  
(2-Chip  
Enable)  
Name  
ADSC  
I/O  
Input-  
Description  
Address Strobe from Controller, sampled  
85  
85  
B4  
A8  
Synchronous on the rising edge of CLK, active LOW.  
When asserted LOW, addresses presented  
to the device are captured in the address  
registers. A[1:0] are also loaded into the  
burst counter. When ADSP and ADSC are  
both asserted, only ADSP is recognized.  
87  
64  
87  
64  
M4  
T7  
A7  
Input-  
Byte Write Enable Input, active LOW.  
BWE  
ZZ  
Synchronous Sampled on the rising edge of CLK. This  
signal must be asserted LOW to conduct a  
byte write.  
H11  
Input-  
ZZ “sleep” Input, active HIGH. When  
Asynchronous asserted HIGH places the device in a  
non-time-critical “sleep” condition with data  
integrity preserved. For normal operation,  
this pin has to be LOW or left floating. ZZ pin  
has an internal pull-down.  
52,53,56,57, 52,53,56,57, K6,L6,M6, M11,L11,  
I/O-  
Bidirectional Data I/O lines. As inputs, they  
DQs  
58,59,62,63, 58,59,62,63, N6,K7,L7,  
K11,J11,  
Synchronous feed into an on-chip data register that is  
triggered by the rising edge of CLK. As  
outputs, they deliver the data contained in  
the memory location specified by the  
68,69,72,73, 68,69,72,73, N7,P7,E6, J10,K10,  
74,75,78,79, 74,75,78,79, F6,G6,H6, L10,M10,  
2,3,6,7,8,9, 2,3,6,7,8,9, D7,E7,G7, D10,E10,  
12,13,18,19, 12,13,18,19, H7,D1,E1, F10,G10,  
22,23,24,25, 22,23,24,25, G1,H1,E2, D11,E11,  
addresses presented during the previous  
clock rise of the read cycle. The direction of  
the pins is controlled by OE. When OE is  
asserted LOW, the pins behave as outputs.  
When HIGH, DQs and DQP[A:D] are placed  
28,29  
28,29  
F2,G2,H2, F11,G11,  
K1,L1,N1, D1,E1,F1,  
P1,K2,L2, G1,D2,E2,  
M2,N2  
F2,G2,J1,  
K1,L1,M1,  
J2,K2,L2  
M2,  
The outputs are  
in a three-state condition.  
automatically three-stated during the data  
portion of a write sequence, during the first  
clock when emerging from a deselected  
state, and when the device is deselected,  
regardless of the state of OE.  
51,80,1,30 51,80,1,30 P6,D6,D2, N11,C11,C1,  
I/O-  
Bidirectional Data Parity I/O Lines.  
DQP[A:D]  
MODE  
P2  
N1  
Synchronous Functionally, these signals are identical to  
DQs. During write sequences, DQP[A:D] is  
controlled by BW[A:D] correspondingly.  
31  
31  
R3  
R1  
Input-Static Selects Burst Order. When tied to GND  
selects linear burst sequence. When tied to  
V
DD or left floating selects interleaved burst  
sequence. This is a strap pin and should  
remain static during device operation. Mode  
Pin has an internal pull-up.  
VDD  
15,41,65,91 15,41,65,91 J2,C4,J4, D4,D8,E4, Power Supply Power supply inputs to the core of the  
R4,J6  
E8,F4,F8,  
G4,G8,  
device.  
H4,H8,J4,  
J8,K4,K8,  
L4,L8,M4,  
M8  
VDDQ  
4,11,20,27, 4,11,20,27, A1,F1,J1, C3,C9,D3,  
I/O Power  
Supply  
Power supply for the I/O circuitry.  
54,61,70,77 54,61,70,77 M1,U1, D9,E3,E9,  
A7,F7,J7, F3,F9,G3,  
M7,U7  
G9,J3,J9,  
K3,K9,L3,  
L9,M3,M9,  
N3,N9  
Document #: 38-05302 Rev. *B  
Page 8 of 34  
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