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CY7C1361B-133BGC 参数 Datasheet PDF下载

CY7C1361B-133BGC图片预览
型号: CY7C1361B-133BGC
PDF下载: 下载PDF文件 查看货源
内容描述: 9兆位( 256K ×36 / 512K ×18 )流通型SRAM [9-Mbit (256K x 36/512K x 18) Flow-Through SRAM]
分类和应用: 静态存储器
文件页数/大小: 34 页 / 820 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY7C1361B
CY7C1363B
CY7C1363B: Pin Definitions
(continued)
Name
ADSC
TQFP
(3-Chip
Enable)
85
TQFP
(2-Chip
Enable)
85
BGA
(2-Chip
Enable)
B4
fBGA
(3-Chip
Enable)
A8
I/O
Input-
Synchronous
Description
Address Strobe from Controller,
sampled on the rising edge of CLK,
active LOW.
When asserted LOW,
addresses presented to the device are
captured in the address registers. A
[1:0]
are
also loaded into the burst counter. When
ADSP and ADSC are both asserted, only
ADSP is recognized.
ZZ
64
64
T7
H11
Input-
ZZ “sleep” Input, active HIGH.
When
Asynchronous asserted HIGH places the device in a
non-time-critical “sleep” condition with data
integrity preserved. For normal operation,
this pin has to be LOW or left floating. ZZ pin
has an internal pull-down.
I/O-
Synchronous
Bidirectional Data I/O lines.
As inputs,
they feed into an on-chip data register that
is triggered by the rising edge of CLK. As
outputs, they deliver the data contained in
the memory location specified by the
addresses presented during the previous
clock rise of the read cycle. The direction of
the pins is controlled by OE. When OE is
asserted LOW, the pins behave as outputs.
When HIGH, DQ
s
and DQP
[A:B]
are placed
in a three-state condition.The outputs are
automatically three-stated during the data
portion of a write sequence, during the first
clock when emerging from a deselected
state, and when the device is deselected,
regardless of the state of OE.
Bidirectional Data Parity I/O Lines.
Functionally, these signals are identical to
DQ
s
. During write sequences, DQP
[A:B]
is
controlled by BW
[A:B]
correspondingly.
Selects Burst Order.
When tied to GND
selects linear burst sequence. When tied to
V
DD
or left floating selects interleaved burst
sequence. This is a strap pin and should
remain static during device operation. Mode
Pin has an internal pull-up.
DQ
s
58,59,62,63, 58,59,62,63, P7,K7,G7, J10,K10,
68,69,72,73, 68,69,72,73, E7,F6,H6, L10,M10,
8,9,12,13,
8,9,12,13, L6,N6,D1, D11,E11,
18,19,22,23 18,19,22,23 H1,L1,N1, F11,G11,J1,
E2,G2,K2, K1,L1,M1,
M2
D2,E2,F2,
G2
DQP
[A:B]
74,24
74,24
D6,P2
C11,N1
I/O-
Synchronous
MODE
31
31
R3
R1
Input-Static
V
DD
15,41,65,91 15,41,65,91 C4,J2,J4,
J6,R4
D4,D8,E4,
E8,F4,F8,
G4,G8,
H4,H8,J4,
J8,K4,K8,
L4,L8,M4,
M8
C3,C9,D3,
D9,E3,E9,
F3,F9,G3,
G9,J3,J9,
K3,K9,L3,
L9,M3,M9,
N3,N9
Power Supply
Power supply inputs to the core of the
device.
V
DDQ
4,11,20,27, 4,11,20,27, A1,A7,F1,
54,61,70,77 54,61,70,77 F7,J1,J7,
M1,M7,U1
,U7
I/O Power
Supply
Power supply for the I/O circuitry.
Document #: 38-05302 Rev. *B
Page 11 of 34