欢迎访问ic37.com |
会员登录 免费注册
发布采购

CY7C1361B-133BGC 参数 Datasheet PDF下载

CY7C1361B-133BGC图片预览
型号: CY7C1361B-133BGC
PDF下载: 下载PDF文件 查看货源
内容描述: 9兆位( 256K ×36 / 512K ×18 )流通型SRAM [9-Mbit (256K x 36/512K x 18) Flow-Through SRAM]
分类和应用: 静态存储器
文件页数/大小: 34 页 / 820 K
品牌: CYPRESS [ CYPRESS ]
 浏览型号CY7C1361B-133BGC的Datasheet PDF文件第3页浏览型号CY7C1361B-133BGC的Datasheet PDF文件第4页浏览型号CY7C1361B-133BGC的Datasheet PDF文件第5页浏览型号CY7C1361B-133BGC的Datasheet PDF文件第6页浏览型号CY7C1361B-133BGC的Datasheet PDF文件第8页浏览型号CY7C1361B-133BGC的Datasheet PDF文件第9页浏览型号CY7C1361B-133BGC的Datasheet PDF文件第10页浏览型号CY7C1361B-133BGC的Datasheet PDF文件第11页  
CY7C1361B  
CY7C1363B  
CY7C1361B–Pin Definitions  
TQFP  
(3-Chip  
Enable)  
TQFP  
(2-Chip  
Enable)  
BGA  
fBGA  
(3-Chip  
Enable)  
(2-Chip  
Enable)  
Name  
A0, A1, A  
I/O  
Input-  
Description  
Address Inputs used to select one of the  
37,36,32,33, 37,36,32,33, P4,N4,A2, R6,P6,A2,  
34,35,43,44, 34,35,44,45, C2,R2,A3, A10,B2,B10, Synchronous 256K address locations. Sampled at the  
45,46,47,48, 46,47,48,49, B3,C3,T3, P3,P4,P8,  
49,50,81,82, 50,81,82,92, T4,A5,B5, P9,P10,P11,  
rising edge of the CLK if ADSP or ADSC is  
active LOW, and CE1, CE2, and CE3[2] are  
sampled active. A[1:0] feed the 2-bit counter.  
99,100  
99,100  
C5,T5,A6, R3,R4,R8,  
B6,C6,R6 R9,R10,R11  
93,94,95,96 93,94,95,96 L5,G5,G3, B5,A5,A4,  
Input-  
Byte Write Select Inputs, active LOW. Qual-  
BWA,BWB  
BWC,BWD  
L3  
B4  
Synchronous ified with BWE to conduct byte writes to the  
SRAM. Sampled on the rising edge of CLK.  
H4  
B7  
Input-  
Global Write Enable Input, active LOW.  
88  
88  
GW  
Synchronous When asserted LOW on the rising edge of  
CLK, a global write is conducted (ALL bytes  
are written, regardless of the values on  
BW[A:D]and BWE).  
CLK  
CE1  
CE2  
89  
98  
89  
98  
K4  
E4  
B6  
A3  
Input-  
Clock Input. Used to capture all  
Clock  
synchronous inputs to the device. Also used  
to increment the burst counter when ADV is  
asserted LOW, during a burst operation.  
Input-  
Chip Enable 1 Input, active LOW. Sampled  
Synchronous on the rising edge of CLK. Used in  
conjunction with CE2 and CE3[2] to  
select/deselect the device. ADSP is ignored  
if CE1 is HIGH.  
97  
92  
86  
97  
B2  
B3  
A6  
B8  
Input-  
Chip Enable 2 Input, active HIGH.  
Synchronous Sampled on the rising edge of CLK. Used in  
conjunction with CE1 and CE3[2] to  
select/deselect the device.  
[2]  
Input-  
Chip Enable 3 Input, active LOW. Sampled  
CE3  
Synchronous on the rising edge of CLK. Used in  
conjunction with CE1 and CE2 to select/  
deselect the device.  
86  
F4  
Input-  
Output Enable, asynchronous input,  
OE  
Asynchronous active LOW. Controls the direction of the I/O  
pins. When LOW, the I/O pins behave as  
outputs. When deasserted HIGH, I/O pins  
are three-stated, and act as input data pins.  
OE is masked during the first clock of a read  
cyclewhenemergingfromadeselectedstate.  
83  
84  
83  
84  
G4  
A4  
A9  
B9  
Input-  
Advance Input signal, sampled on the  
ADV  
Synchronous rising edge of CLK. When asserted, it  
automatically increments the address in a  
burst cycle.  
Input-  
Address Strobe from Processor, sampled  
ADSP  
Synchronous on the rising edge of CLK, active LOW.  
When asserted LOW, addresses presented  
to the device are captured in the address  
registers. A[1:0] are also loaded into the burst  
counter. When ADSP and ADSC are both  
asserted, only ADSP is recognized. ASDP is  
ignored when  
is deasserted HIGH.  
CE1  
Document #: 38-05302 Rev. *B  
Page 7 of 34  
 复制成功!