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50S116T 参数 Datasheet PDF下载

50S116T图片预览
型号: 50S116T
PDF下载: 下载PDF文件 查看货源
内容描述: SDRAM ( 512K ×2组X 16位SDRAM ) [SDRAM(512K X 2 BANKS X 16 BITS SDRAM)]
分类和应用: 动态存储器
文件页数/大小: 42 页 / 1289 K
品牌: CERAMATE [ CERAMATE TECHNICAL ]
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50S116T  
SDRAM  
Operating Timing Example, continued  
Auto Precharge Timing (Read Cycle)  
0
1
2
3
4
5
6
7
8
9
10  
11  
(1) CAS Latency=2  
( a ) burst length = 1  
Command  
AP  
Read  
Act  
tRP  
DQ  
Q0  
( b ) burst length = 2  
Command  
Read  
Read  
Read  
AP  
Q0  
Act  
tRP  
DQ  
Q1  
( c ) burst length = 4  
Command  
AP  
Q2  
Act  
Q4  
tRP  
DQ  
Q0  
Q0  
Q1  
Q1  
Q3  
( d ) burst length = 8  
Command  
AP  
Q6  
Act  
tRP  
DQ  
Q5  
Q7  
Q2  
Act  
Q3  
(2) CAS Latency=3  
( a ) burst length = 1  
Command  
Read  
Read  
Read  
Read  
AP  
tRP  
DQ  
Q0  
Q0  
Q0  
Q0  
( b ) burst length = 2  
Command  
AP  
Act  
tRP  
DQ  
Q1  
AP  
Q1  
( c ) burst length = 4  
Command  
Act  
Q4  
tRP  
DQ  
Q2  
Q2  
Q3  
Q3  
( d ) burst length = 8  
Command  
AP  
Q5  
Act  
tRP  
DQ  
Q1  
Q6  
Q7  
Note:  
represents the Read with Auto precharge command.  
represents the start of internal precharging.  
represents the Bank Activate command.  
Read  
AP  
Act  
When the Auto precharge command is asserted, the period from Bank Activate command to  
the start of internal precgarging must be at least tRAS(min).  
* All specs and applications shown above subject to change without prior notice.  
1F-5 NO.66 SEC.2 NAN-KAN RD ., LUCHU , TAOYUAN, TAIWAN, R.O.C  
Tel:886-3-3214525  
Email: server@ceramate.com.tw  
Http: www.ceramate.com.tw  
Rev 1.0 Aug.20,2002  
Page 35 of 42  
Fax:886-3-3521052  
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