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XTR108EA-2K5 参数 Datasheet PDF下载

XTR108EA-2K5图片预览
型号: XTR108EA-2K5
PDF下载: 下载PDF文件 查看货源
内容描述: 制4-20mA ,二线发射机???? ???? SMARTA可编程信号调节 [4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning]
分类和应用: 发射机
文件页数/大小: 32 页 / 901 K
品牌: BB [ BURR-BROWN CORPORATION ]
 浏览型号XTR108EA-2K5的Datasheet PDF文件第8页浏览型号XTR108EA-2K5的Datasheet PDF文件第9页浏览型号XTR108EA-2K5的Datasheet PDF文件第10页浏览型号XTR108EA-2K5的Datasheet PDF文件第11页浏览型号XTR108EA-2K5的Datasheet PDF文件第13页浏览型号XTR108EA-2K5的Datasheet PDF文件第14页浏览型号XTR108EA-2K5的Datasheet PDF文件第15页浏览型号XTR108EA-2K5的Datasheet PDF文件第16页  
means that one LSB of the coarse DAC is equal to 16 fine  
LSBs, and the full-scale range of the fine DAC is equal to 16  
coarse LSBs. This effectively produces 12-bit adjustment  
resolution. This allows the user to set pre-calculated values  
before the calibration, using the coarse DAC only and adjust  
the reference current output level with the fine DAC during  
the calibration process.  
n-channel depletion-mode MOS transistor and three capaci-  
tors, see Figure 2.  
A number of third-party suppliers make n-channel deple-  
tion-mode MOSFETs. A list of devices tested by Texas  
Instruments, Inc. is shown in Table IV with the capacitor  
values recommended for those devices.  
MANUFACTURER  
MOSFET MODEL  
CGATE VALUE  
LINEARIZATION CIRCUIT AND RLIN RESISTOR  
Supertex  
DN2535, DN2540  
DN3535, DN3525  
220pF  
1000pF  
The XTR108 incorporates circuitry for correcting a second-  
order sensor nonlinearity. A current proportional to the  
voltage at the input of the PGA is added to the sensor  
excitation. The RLIN resistor is used to convert this voltage  
into current. By appropriately scaling this current using the  
linearization DAC, parabolic sensor nonlinearity can be  
improved by up to a 40:1 ratio, as shown in Figure 3. The  
linearization coefficient (ratio of the reference current change  
to the input voltage) is expressed in µA/mV as follows:  
Siliconix  
Infineon  
ND2012, ND2020  
BSP149  
220pF  
1000pF  
TABLE IV. Recommended Gate Capacitor Values For Se-  
lected MOSFETs.  
The capacitors CLOOP (0.01µF), CREG (2.2µF), and CGATE  
are required for the regulator loop stability and supply  
bypass. They should be placed in close proximity to the  
XTR108 on the PCB. An additional 1µF capacitor may be  
used to bypass the supply of an EEPROM chip.  
IREF  
N14  
GLIN  
=
VIN 16 RLIN  
If a MOSFET other than those listed in Table IV is used, the  
value of CGATE should be adjusted such that there is no  
overshoot of VS during power-up and supply glitches. Any  
VS overshoot above 7.5V may damage the XTR108 or  
deteriorate its performance.  
where N14 is the decimal value from register 14.  
The recommended value of the resistor is 15.8k, for use  
with 100RTD sensors. This value produces a full-scale  
linearization coefficient of about 1mA/V. Please see the  
section below on using the XTR108 with an RTD tempera-  
ture sensor. If the sensor excitation is scaled down by  
increasing the value of RSET, the value of RLIN should be  
scaled proportionally.  
LOOP VOLTAGE  
The XTR108 transmitter minimum loop voltage can some-  
what be effected by the choice of the external MOSFET. The  
devices are tested to 7.5V compliance with Supertex DN2540;  
choosing other MOSFETs can change this value slightly.  
The maximum loop voltage is limited by the power dissipa-  
tion on the MOSFET as well as its breakdown voltage.  
Possible ambient temperatures and the power dissipation  
should be taken into account when selecting the MOSFET  
package. The external MOSFET can dissipate a consider-  
able amount of power when running at high loop supply. For  
example, if VLOOP = 24V and IOUT = 20mA, the DC power  
dissipated by the MOSFET is:  
5
4
3
Uncorrected  
RTD Nonlinearity  
2
Corrected  
Nonlinearity  
1
0
PMOSFET = IOUT (VLOOP – VS) = 380mΩ  
For a SOT-89 package soldered on an FR5 board, this will  
cause a 30°C rise in the temperature. The power dissipation  
gets significantly higher when the circuit is driven into an  
over-scale condition. Therefore, special attention should be  
paid to removing the heat from the MOSFET, especially  
with small-footprint packages such as SOT-89 and TO-92.  
Please follow manufacturer’s recommendations about the  
package thermal characteristics and board mounting.  
1  
200°C  
+850°C  
Process Temperature (°C)  
FIGURE 3. Pt100 Nonlinearity Correction Using the XTR108.  
SUB-REGULATOR WITH EXTERNAL MOSFET  
UNCOMMITTED OP AMP  
The XTR108 is manufactured using a low-voltage CMOS  
process with maximum supply voltage limited to 5.5V. For  
applications in a 4-20mA current loop, a special sub-regulator  
circuit is incorporated in the device that requires an external  
For added flexibility in various applications, the XTR108  
has an on-chip uncommitted operational amplifier. The op  
amp has rail-to-rail output range. The input range extends to  
IRET potential.  
XTR108  
12  
SBOS187C  
www.ti.com  
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