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SMJ44C251B-12HJM 参数 Datasheet PDF下载

SMJ44C251B-12HJM图片预览
型号: SMJ44C251B-12HJM
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×4 VRAM 256K ×4的DRAM 512K ×4的SAM [256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM]
分类和应用: 内存集成电路动态存储器
文件页数/大小: 57 页 / 1255 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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VRAM  
SMJ44C251B  
MT42C4256  
Austin Semiconductor, Inc.  
*Stresses greater than those listed under "Absolute Maximum  
Ratings" may cause permanent damage to the device. This is  
a stress rating only and functional operation of the device at  
these or any other conditions above those indicated in the  
operation section of this specification is not implied. Exposure  
to absolute maximum rating conditions for extended periods  
may affect reliability.  
ABSOLUTE MAXIMUM RATINGS*  
Supply voltage range, VCC1.................................................-1V to 7V  
Voltage range on any pin1..................................................-1Vto 7V  
Short-circuit output current.......................................................50mA  
Power dissipation............................................................................1W  
Operating free-air temperature range,TA...................-55°C to 125°C  
Storage temperature range,TSTG.................................-65°C to 150°C  
NOTE: 1. All voltage values are with respect to Vss.  
RECOMMENDED OPERATING CONDITIONS  
SYM  
PARAMETER  
Supply Voltage  
MIN  
NOM  
MAX  
UNIT  
V
V
4.5  
5
5.5  
V
CC  
SS  
Supply Voltage  
0
V
V
V
High-level input voltage  
Low-level input voltage**  
Operating free-air temperature  
Operating case temperature  
2.9  
-1  
6.5  
0.6  
125  
125  
IH  
IL  
V
V
T
A
-55  
°C  
°C  
T
C
NOTE: **The algebraic convention, where the more negative (less positive) limit is designated as minimum, is used for logic-voltage levels only.  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
SMJ44C251B/MT42C4256  
Rev. 0.1 12/03  
16  
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