欢迎访问ic37.com |
会员登录 免费注册
发布采购

SMJ44C251B-12HJM 参数 Datasheet PDF下载

SMJ44C251B-12HJM图片预览
型号: SMJ44C251B-12HJM
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×4 VRAM 256K ×4的DRAM 512K ×4的SAM [256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM]
分类和应用: 内存集成电路动态存储器
文件页数/大小: 57 页 / 1255 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
 浏览型号SMJ44C251B-12HJM的Datasheet PDF文件第9页浏览型号SMJ44C251B-12HJM的Datasheet PDF文件第10页浏览型号SMJ44C251B-12HJM的Datasheet PDF文件第11页浏览型号SMJ44C251B-12HJM的Datasheet PDF文件第12页浏览型号SMJ44C251B-12HJM的Datasheet PDF文件第14页浏览型号SMJ44C251B-12HJM的Datasheet PDF文件第15页浏览型号SMJ44C251B-12HJM的Datasheet PDF文件第16页浏览型号SMJ44C251B-12HJM的Datasheet PDF文件第17页  
VRAM  
SMJ44C251B  
MT42C4256  
Austin Semiconductor, Inc.  
NORMAL-READ TRANSFER  
A normal-read transfer can be performed in three ways:  
early-load read transfer, real-time or midline-load read transfer,  
and late-load read transfer. Each of these offers the flexibility of  
controlling the TRG\ trailing edge in the read-transfer cycle  
(see Figure 7).  
(refer to Figure 7)  
address bits (A0A8) are latched at the falling edge of CAS\ to  
select one of the SAM’s 512 available tap points where the  
serial data is read out.  
FIGURE 6: NORMAL-WRITE-TRANSFER-CYCLE TIMING  
FIGURE 7: NORMAL-READ-TRANSFER TIMINGS  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
SMJ44C251B/MT42C4256  
Rev. 0.1 12/03  
13  
 复制成功!