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SMJ44C251B-12HJM 参数 Datasheet PDF下载

SMJ44C251B-12HJM图片预览
型号: SMJ44C251B-12HJM
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×4 VRAM 256K ×4的DRAM 512K ×4的SAM [256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM]
分类和应用: 内存集成电路动态存储器
文件页数/大小: 57 页 / 1255 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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VRAM  
SMJ44C251B  
MT42C4256  
Austin Semiconductor, Inc.  
Memory-to-register transfer (pseudo-transfer write).  
Switches serial port from serial-out mode to serial-in  
mode. No actual data transfer takes place between the  
DRAM and the SAM.  
Memory-to-register transfer (normal-read transfer,  
transfer entire contents of DRAM row to SAM)  
Split-register-read transfer (divides the SAM into a low  
and a high half. Only one half is transferred to the  
SAM while the other half is read from the serial I/O port.)  
TRANSFER OPERATION  
Transfer operations between the memory arrays (DRAM)  
and the data registers (SAM) are invoked by bringing TRG\ low  
before RAS\ falls. The states of W\, SE\, and DSF, which are  
also latched on the falling edge of RAS\, determine which transfer  
operation is invoked. Figure 5 shows an overview of data flow  
between the random and the serial interfaces.  
As shown in the “Transfer-Operation Functions” table,  
the SMJ44C251B/MT42C4256 supports five basic modes of  
transfer operation:  
Register-to-memory transfer (normal write transfer,  
SAM to DRAM)  
Alternate-write transfer (independent of the state of  
SE\)  
FIGURE 5: BLOCK DIAGRAM SHOWING ONE RANDOMAND ONE  
SERIAL-I/O INTERFACE  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
SMJ44C251B/MT42C4256  
Rev. 0.1 12/03  
11  
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