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EPCS4SI8N 参数 Datasheet PDF下载

EPCS4SI8N图片预览
型号: EPCS4SI8N
PDF下载: 下载PDF文件 查看货源
内容描述: 串行配置器件 [Serial Configuration Devices]
分类和应用: 存储内存集成电路光电二极管过程控制系统PCSLTE可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
文件页数/大小: 32 页 / 241 K
品牌: ALTERA [ ALTERA CORPORATION ]
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Serial Configuration Devices (EPCS1, EPCS4, EPCS16 & EPCS64) Data Sheet  
All attempts to access the memory contents while a write or erase cycle is  
in progress will not be granted, and the write or erase cycle will continue  
unaffected.  
Table 4–8. Operation Codes for Serial Configuration Devices  
DCLK fMAX  
(MHz)  
Operation  
Operation Code (1) Address Bytes  
Dummy Bytes  
Data Bytes  
Write enable  
Write disable  
Read status  
Read bytes  
Read silicon ID  
Write status  
Write bytes  
Erase bulk  
0
0
0
3
0
0
3
0
3
0
0
0
0
3
0
0
0
0
0
25  
25  
25  
20  
25  
25  
25  
25  
25  
0000 0110  
0000 0100  
0000 0101  
0000 0011  
1010 1011  
0000 0001  
0000 0010  
1100 0111  
1101 1000  
0
1 to infinite (2)  
1 to infinite (2)  
1 to infinite (2)  
1
1 to 256 (3)  
0
0
Erase sector  
Notes to Table 4–8:  
(1) The MSB is listed first and the least significant bit (LSB) is listed last.  
(2) The status register, data or silicon ID are read out at least once on the DATApin and will continuously be read out  
until nCSis driven high  
(3) Write bytes operation requires at least one data byte on the DATApin. If more than 256 bytes are sent to the device,  
only the last 256 bytes are written to the memory.  
Write Enable Operation  
The write enable operation code is b'0000 0110, and the most  
significant bit is listed first. The write enable operation sets the write  
enable latch bit, which is bit 1 in the status register. Always set the write  
enable latch bit before write bytes, write status, erase bulk, and erase  
sector operations. Figure 4–5 shows the timing diagram for the write  
enable operation. Figures 4–7 and 4–8 show the status register bit  
definitions.  
Altera Corporation  
July 2004  
Core Version a.b.c variable  
4–11  
Configuration Handbook, Volume 2  
 
 
 
 
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