Serial Configuration Devices (EPCS1, EPCS4, EPCS16 & EPCS64) Data Sheet
Figure 4–9. Read Status Operation Timing Diagram
nCS
DCLK
ASDI
DATA
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
Operation Code
Status Register Out
Status Register Out
High Impedance
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
MSB
MSB
Write Status Operation
The write status operation code is b'0000 0001, with the MSB listed
first. Use the write status operation to set the status register block
protection bits. The write status operation has no effect on the other bits.
Therefore, designers can implement this operation to protect certain
memory sectors, as defined in Tables 4–9 and 4–10. After setting the block
protect bits, the protected memory sectors are treated as read-only
memory. Designers must execute the write enable operation before the
write status operation so the device sets the status register’s write enable
latch bit to 1.
The write status operation is implemented by driving nCSlow, followed
by shifting in the write status operation code and one data byte for the
status register on the ASDIpin. Figure 4–10 shows the timing diagram for
the write status operation. nCSmust be driven high after the eighth bit of
the data byte has been latched in, otherwise, the write status operation is
not executed.
Immediately after nCSis driven high, the device initiates the self-timed
write status cycle. The self-timed write status cycle usually takes 5 ms for
both serial configuration devices and is guaranteed to be less than 15 ms
(see tWS in Table 4–12). Designers must account for this delay to ensure
that the status register is written with desired block protect bits.
Alternatively, you can check the write in progress bit in the status register
by executing the read status operation while the self-timed write status
cycle is in progress. The write in progress bit is 1 during the self-timed
write status cycle, and is 0 when it is complete.
Altera Corporation
July 2004
Core Version a.b.c variable
4–15
Configuration Handbook, Volume 2