ADSP-BF542/ADSP-BF544/ADSP-BF547/ADSP-BF548/ADSP-BF549
ELECTRICAL CHARACTERISTICS
Nonautomotive 400 MHz1
All Other Devices2
Parameter
Test Conditions
Min
Typ
Max
Min
Typ
Max
Unit
VOH
High Level Output
VDDEXT = 2.7 V,
2.4
2.4
V
Voltage for 3.3 V I/O3 IOH = –0.5 mA
High Level Output
VDDEXT = 2.25 V,
2.0
2.0
V
V
Voltage for 2.5 V I/O3 IOH = –0.5 mA
VOHDDR
High Level Output
Voltage for DDR
SDRAM4
VDDDDR = 2.5 V,
IOH = –8.1 mA
1.74
1.74
High Level Output
Voltage for Mobile
DDR SDRAM4
VDDDDR = 1.8 V,
IOH = –0.1 mA
1.62
1.62
V
VOL
Low Level Output
VDDEXT = 2.7 V,
0.4
0.4
0.4
0.4
V
V
V
Voltage for 3.3 V I/O3 IOL = 2.0 mA
Low Level Output
VDDEXT = 2.25 V,
IOL = 2.0 mA
Voltage for 2.5 V I/O3
VOLDDR
Low Level Output
Voltage for DDR
SDRAM4
VDDDDR = 2.5 V,
IOL = 8.1 mA
0.56
0.56
Low Level Output
Voltage for Mobile
DDR SDRAM4
VDDDDR = 1.8 V,
IOL = 0.1 mA
0.18
0.18
V
IIH
High Level Input
Current5
VDDEXT =3.6 V,
VIN = VIN Max
10.0
50.0
30.0
10.0
50.0
30.0
μA
μA
μA
IIHP
High Level Input
Current6
VDDEXT =3.6 V,
VIN = VIN Max
IIHDDR_VREF
High Level Input
Current for DDR
SDRAM7
VDDDDR =2.7 V,
VIN = 0.51 × VDDDDR
High Level Input
Current for Mobile
DDR SDRAM7
VDDDDR =1.95 V,
VIN = 0.51 × VDDDDR
30.0
30.0
μA
8
IIL
Low Level Input
Current
VDDEXT =3.6 V, VIN = 0 V
10.0
10.0
10.0
812
10.0
10.0
10.0
812
μA
μA
μA
pF
9
IOZH
Three-State Leakage VDDEXT =3.6 V,
Current10
VIN = VIN Max
11
IOZL
Three-State Leakage VDDEXT =3.6 V, VIN = 0 V
Current10
CIN
Input Capacitance12 fIN = 1 MHz,
TAMBIENT = 25°C,
412
22
412
37
VIN = 2.5 V
13
IDDDEEPSLEEP
VDDINT Current in Deep VDDINT = 1.0 V,
mA
Sleep Mode
fCCLK = 0 MHz,
fSCLK = 0 MHz,
TJ = 25°C, ASF = 0.00
IDDSLEEP
VDDINT Current in Sleep VDDINT = 1.0 V,
Mode SCLK = 25 MHz,
TJ = 25°C
VDDINT Current in Idle VDDINT = 1.0 V,
CCLK = 50 MHz,
35
44
50
59
mA
mA
f
IDD-IDLE
f
TJ = 25°C,
ASF = 0.47
Rev. C
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Page 36 of 100
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February 2010
ADI [ ADI ]
