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5962-0421901QUA 参数 Datasheet PDF下载

5962-0421901QUA图片预览
型号: 5962-0421901QUA
PDF下载: 下载PDF文件 查看货源
内容描述: [Field Programmable Gate Array, 250000 Gates, CMOS, CPGA624, CERAMIC, CGA-624]
分类和应用: 可编程逻辑
文件页数/大小: 217 页 / 1554 K
品牌: ACTEL [ Actel Corporation ]
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MIL-PRF-38535K  
APPENDIX A  
A.3.1.3.16 Rework. Any processing or reprocessing operation documented in accordance with A.4.8.1.1.6h  
herein, other than testing, applied to an individual device, or part thereof, and performed subsequent to the  
prescribed non repairing manufacturing operations which are applicable to all devices of that type at that stage.  
A.3.1.3.17 Final seal. That manufacturing operation which completes the enclosure of a device so that further  
internal processing cannot be performed without disassembling the device.  
A.3.1.3.18 Acquiring activity. The organizational element of the Government which contracts for articles, supplies,  
or services; or it may be a contractor or subcontractor when the organizational element of the Government has given  
specific written authorization to such contractor or subcontractor to serve as agent of the acquiring activity. A  
contractor or subcontractor serving as agent of the acquiring activity shall not have the authority to grant waivers,  
deviations, or exceptions to this appendix unless specific written authorization to do so has also been given by the  
Government organization (e.g., preparing activity).  
A.3.1.3.19 Qualifying activity. The organizational element of the Government that grants certification and  
qualification for the specific associated end-product in accordance with this appendix and the applicable device  
specification or drawing. For non-JAN product built in accordance with this appendix, the qualifying activity shall be  
either the acquiring activity or quality organization within the manufacturer's company that is independent of the  
group(s) responsible for device production screening and marketing or by an independent organization outside the  
manufacturer's company.  
A.3.1.3.20 Device type. The term device type refers to a single specific microcircuit configuration. Samples of the  
same device type will be electrically and functionally interchangeable with each other at the die or substrate level  
even though made by different manufacturers using different mechanical layouts and possibly different materials.  
The electrical and environmental limits will be the same (but not necessarily the inherent reliability) for a given device  
type even though the device class, the case outline, the lead finish, the lot identification code, and the manufacturer  
may be different.  
A.3.1.3.21 Die type. A microcircuit manufactured using the same physical size, materials, topology, mask set, and  
process flow, on a single fabrication line.  
A.3.1.3.22 Antistatic. An antistatic material resists triboelectric charging upon contact and separation with another  
material. Plastic materials impregnated with antistatic agents (antistats) are antistatic if their surface resistivity is  
between 109 and 1014 ohms/square.  
A.3.1.3.23 Conductive. A conductive material is one capable of electrostatic field shielding and having a volume  
resistivity of 103 ohm-cm maximum or a surface resistivity less than 105 ohms/square.  
A.3.1.3.24 Insulating. An insulating material is defined as having a volume resistivity of 1012 ohm-cm minimum, or  
a surface resistivity of 1014 ohms/square minimum.  
A.3.1.3.25 Dissipative. A dissipative material is defined as having a surface resistivity between 105 and 109  
ohms/square.  
A.3.1.3.26 Radiation hardness assurance (RHA). The portion of product assurance which insures that parts  
continue to perform as specified or degrade in a specified manner when subjected to the specified radiation  
environmental stress.  
A.3.1.3.27 Electrostatic discharge (ESD) sensitivity. Electrostatic discharge sensitivity is defined as the level of  
susceptibility of a device to damage by static electricity. The level of susceptibility of a device is found by ESD  
classification testing and is used as the basis for assigning an ESD class (see A.3.4.1.4).  
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