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HY29F800BT-70E 参数 Datasheet PDF下载

HY29F800BT-70E图片预览
型号: HY29F800BT-70E
PDF下载: 下载PDF文件 查看货源
内容描述: X8 / X16闪存EEPROM [x8/x16 Flash EEPROM ]
分类和应用: 闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 40 页 / 311 K
品牌: ETC [ ETC ]
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HY29F800  
Table 2. HY29F800 Normal Bus Operations1  
DQ[15:8]  
BYTE# = H BYTE# = L  
Operation  
CE#  
OE#  
WE#  
RESET# Address 2 DQ[7:0]  
Read  
Write  
L
L
L
H
H
X
X
H
L
H
AIN  
AIN  
X
DOUT  
DIN  
DOUT  
DIN  
High-Z  
High-Z  
High-Z  
High-Z  
High-Z  
H
Output Disable  
L
H
X
X
H
H
High-Z  
High-Z  
High-Z  
High-Z  
High-Z  
High-Z  
CE# TTL Standby  
H
X
CE# CMOS Standby VCC ± 0.5V  
VCC ± 0.5V  
X
Hardware Reset  
X
X
X
X
X
L
X
X
High-Z  
High-Z  
High-Z  
High-Z  
High-Z  
High-Z  
(TTL Standby)  
Hardware Reset  
X
VSS ± 0.5V  
(CMOS Standby)  
Notes:  
1. L = VIL, H = VIH, X = Don’t Care, DOUT = Data Out, DIN = Data In. See DC Characteristics for voltage levels.  
2. Address is A[18:-1] in Byte Mode and A[18:0] in Word Mode.  
3. DQ[15] is the A[-1] input in Byte Mode (BYTE# = L).  
BUS OPERATIONS  
Device bus operations are initiated through the  
internal command register, which consists of sets  
of latches that store the commands, along with  
the address and data information, if any, needed  
to execute the specific command. The command  
register itself does not occupy any addressable  
memory location. The contents of the command  
register serve as inputs to an internal state ma-  
chine whose outputs control the operation of the  
device. Table 2 lists the normal bus operations,  
the inputs and control levels they require, and the  
resulting outputs. Certain bus operations require  
a high voltage on one or more device pins. Those  
are described in Table 3.  
the memory content occurs during the power tran-  
sition. No command is necessary in this mode to  
obtain array data, and the device remains enabled  
for read accesses until the command register con-  
tents are altered.  
This device features an Erase Suspend mode.  
While in this mode, the host may read the array  
data from any sector of memory that is not marked  
for erasure. If the host attempts to read from an  
address within an erase-suspended sector, or  
while the device is performing an erase or byte/  
word program operation, the device outputs sta-  
tus data instead of array data. After completing a  
programming operation in the Erase Suspend  
mode, the system may once again read array data  
with the same exceptions noted above. After com-  
pleting an internal program or internal erase algo-  
rithm, the HY29F800 automatically returns to the  
read array data mode.  
Read Operation  
Data is read from the HY29F800 by using stan-  
dard microprocessor read cycles while placing the  
address of the byte or word to be read on the  
device’s address inputs, A[18:0] in Word mode  
(BYTE# = H) or A[18:-1] in Byte mode (BYTE# =  
L) . As shown in Table 2, the host system must  
drive the CE# and OE# inputs Low and drive WE#  
High for a valid read operation to take place. The  
device outputs the specified array data on DQ[7:0]  
in Byte mode and on DQ[15:0] in Word mode.  
Note that DQ[15] serves as address input A[-1]  
when the device is operating in Byte mode.  
The host must issue a hardware reset or the soft-  
ware reset command (see Command Definitions)  
to return a sector to the read array data mode if  
DQ[5] goes high during a program or erase cycle,  
or to return the device to the read array data mode  
while it is in the Electronic ID mode.  
Write Operation  
Certain operations, including programming data  
and erasing sectors of memory, require the host  
to write a command or command sequence to the  
HY29F800. Writes to the device are performed  
The HY29F800 is automatically set for reading  
array data after device power-up and after a hard-  
ware reset to ensure that no spurious alteration of  
Rev. 4.0/Jan. 00  
6
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