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HY29F800BT-70E 参数 Datasheet PDF下载

HY29F800BT-70E图片预览
型号: HY29F800BT-70E
PDF下载: 下载PDF文件 查看货源
内容描述: X8 / X16闪存EEPROM [x8/x16 Flash EEPROM ]
分类和应用: 闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 40 页 / 311 K
品牌: ETC [ ETC ]
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HY29F800  
Table 3. HY29F800 Bus Operations Requiring High Voltage1, 2  
DQ[15:8]  
Operation3  
CE# OE# WE# RESET# A[18:12] A[9] A[6] A[1] A[0] DQ[7:0]  
BYTE# BYTE#  
= H  
= L5  
Sector Protect  
L
VID  
X
X
H
H
SA4  
X
VID  
VID  
X
X
X
X
X
X
X
X
X
High-Z  
High-Z  
Sector Unprotect  
VID VID  
X
Temporary Sector  
Unprotect  
X
L
X
L
X
H
VID  
H
X
X
X
X
L
X
L
X
L
DIN  
DIN  
X
High-Z  
High-Z  
Manufacturer Code  
VID  
0xAD  
0x58  
0xD6  
HY29F800B  
HY29F800T  
Device  
Code  
L
L
H
H
X
VID  
L
L
H
0x22 High-Z  
0x00 =  
Unprotected  
Sector Group  
Protection  
Verification  
L
L
H
H
SA4  
VID  
L
H
L
X
High-Z  
0x01 =  
Protected  
Notes:  
1. L = VIL, H = VIH, X = Don’t Care. See DC Characteristics for voltage levels.  
2. Address bits not specified are Don’t Care.  
3. See text for additional information.  
4. SA = sector address. See Table 1.  
5. DQ[15] is the A[-1] input in Byte Mode (BYTE# = L).  
The device enters the CE# CMOS Standby mode  
if the CE# and RESET# pins are both held at VCC  
± 0.5V. Note that this is a more restricted voltage  
range than VIH. If both CE# and RESET# are held  
High, but not within VCC ± 0.5V, the device will be  
in the CE# TTL Standby mode, but the standby  
current will be greater.  
by placing the byte or word address on the device’s  
address inputs while the data to be written is input  
on DQ[7:0] in Byte mode (BYTE# = L) and on  
DQ[15:0] in Word mode (BYTE# = H). The host  
system must drive the CE# and WE# pins Low  
and drive OE# High for a valid write operation to  
take place. All addresses are latched on the fall-  
ing edge of WE# or CE#, whichever happens later.  
All data is latched on the rising edge of WE# or  
CE#, whichever happens first.  
The device enters the RESET# CMOS Standby  
mode when the RESET# pin is held at VSS ± 0.5V.  
If RESET# is held Low but not within VSS ± 0.5V,  
the HY29F800 will be in the RESET# TTL Standby  
mode, but the standby current will be greater. See  
Hardware Reset Operation section for additional  
information on the reset operation.  
The ‘Device Commands’ section of this document  
provides details on the specific device commands  
implemented in the HY29F800.  
Output Disable Operation  
The device requires standard access time (tCE) for  
read access when the device is in either of the  
standby modes, before it is ready to read data. If  
the device is deselected during erasure or pro-  
gramming, it continues to draw active current until  
the operation is completed.  
When the OE# input is at VIH, output data from the  
device is disabled and the data bus pins are placed  
in the high impedance state.  
Standby Operation  
When the system is not reading from or writing to  
the HY29F800, it can place the device in the  
Standby mode. In this mode, current consump-  
tion is greatly reduced, and the data bus outputs  
are placed in the high impedance state, indepen-  
dent of the OE# input. The Standby mode can  
invoked using two methods.  
Hardware Reset Operation  
The RESET# pin provides a hardware method of  
resetting the device to reading array data. When  
the RESET# pin is driven Low for the minimum  
specified period, the device immediately termi-  
nates any operation in progress, tri-states the data  
bus pins, and ignores all read/write commands for  
Rev. 4.0/Jan. 00  
7
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