Si3210/Si3211/Si3212
VDC
F1
SDCH
SDCL
R191
Note 1
R201
C252
10uF
C142
0.1uF
R181
1
2
3
4
R22
22
C27
470pF
D1
ES1D
VBAT
6
DCFF
M1
IRLL014N
C9
10uF
10
T11
Note 1
R17
200k
DCDRV
NC
GND
Notes:
1. Values and configurations for these components can be derived
from Table 20 or from App Note 45.
2. Voltage rating for C14 and C25 must be greater than VDC.
Figure 11. Si3210M MOSFET/Transformer DC-DC Converter Circuit
Table 14. Si3210M MOSFET/Transformer DC-DC Converter Component Values
Component (s)
C9
Value
10 µF, 100 V, Electrolytic, ±20%
0.1 µF, X7R, ±20%
Supplier
Panasonic
C14*
Murata, Johanson, Novacap, Venkel
Panasonic
C25*
10 µF, Electrolytic, ±20%
C27
470 pF, 100 V, X7R, ±20%
Murata, Johanson, Novacap, Venkel
R17
200 kΩ, 1/10 W, ±5%
R18
1/4 W, ±5% (See AN45 or Table 18 for value selection)
R19,R20
1/10 W, ±1% (See AN45 or Table 18
for value selection)
R22
F1
22 Ω, 1/10 W, ±5%
Fuse
Belfuse SSQ Series
D1
Ultra Fast Recovery 200 V, 1A Rectifier
General Semi ES1D; Central Semi
CMR1U-02
T1
Power Transformer
Coiltronic CTX01-15275;
Datatronics SM76315;
Midcom 31353R-02
M1
100 V, Logic Level Input MOSFET
Intl Rect. IRLL014N; Intersil
HUF76609D3S; ST Micro
STD5NE10L, STN2NE10L
*Note: Voltage rating of this device must be greater than V
.
DC
18
Preliminary Rev. 1.11
ETC [ ETC ]
