欢迎访问ic37.com |
会员登录 免费注册
发布采购

P11C68-35IG 参数 Datasheet PDF下载

P11C68-35IG图片预览
型号: P11C68-35IG
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS / SNOS NVSRAM高性能为8K ×8非易失性静态RAM [CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM]
分类和应用: 静态存储器
文件页数/大小: 17 页 / 156 K
品牌: ZARLINK [ ZARLINK SEMICONDUCTOR INC ]
 浏览型号P11C68-35IG的Datasheet PDF文件第9页浏览型号P11C68-35IG的Datasheet PDF文件第10页浏览型号P11C68-35IG的Datasheet PDF文件第11页浏览型号P11C68-35IG的Datasheet PDF文件第12页浏览型号P11C68-35IG的Datasheet PDF文件第13页浏览型号P11C68-35IG的Datasheet PDF文件第14页浏览型号P11C68-35IG的Datasheet PDF文件第16页浏览型号P11C68-35IG的Datasheet PDF文件第17页  
P10C68/P11C68  
On power-up, once Vcc exceeds the Vcc sense voltage of  
3.3V, a RECALL cycle is automatically initiated. The voltage  
on the Vcc pin must not drop below 3.3V once it has risen  
above it in order for the RECALL to operate properly. Due to  
this automatic RECALL, SRAM operation cannot commence  
until tRECALL after Vcc exceeds 3.3V.  
PACKAGE DETAILS  
Dimensions are shown thus: mm (in). For further package  
information please contact your local Customer Service  
Centre.  
The automatic RECALL feature can be adversely affected  
by factors such as supply rise time, temperature and elapsed  
time since the last STORE cycle. For this reason it is  
recommended that the user initiate a RECALL cycle after  
power-up for critical applications.  
PIN 1  
7.620/8.128  
(0.300/0.320)  
1.27 (0.050) TYP  
35.20/35.92  
(1.386/1.414)  
1.016/1.524  
(0.040/0.060)  
0.229/0.308  
(0.009/0.012)  
1.930/2.39  
(0.05576/0.094)  
0.36/0.51  
(0.014/0.020)  
2.54  
(0.100)  
7.37/7.87  
(0.290/0.310)  
3.30/4.06  
(0.130/0.160)  
Figure 16, 28-lead sidebrazed ceramic DIL (0.3in) DCB  
1.37 (34.8)  
PIN 1  
Pin 1 Ref. notch  
0.288  
(7.32)  
Leads  
0.3/0.55 (0.76/1.4)  
0.2 (5.08) max  
SEATING  
PLANE  
0.02 (0.51)  
0.2/0.3  
0.12 (3.05) min  
Nominal Centres  
0.3 (7.62)  
0.1 (2.54)  
0.015/0.02  
(0.38/0.53)  
Figure 17. 28 plastic DIL Package (0.3in) DPB  
15