Electrical Characteristics MT312
12.3 Crystal Specification
Parallel resonant fundamental frequency (preferred)
Tolerance over operating temperature range
Tolerance overall
9.99 to 16.00MHz.
±25ppm.
±50ppm.
30pF.
Nominal load capacitance
Equivalent series resistance
<35Ω
XTI
XTO
33pF
33pF
GND
Figure 27 - Crystal oscillator circuit
NOTE: The crystal frequency should be chosen to ensure that the system clock would marginally exceed the
maximum symbol rate required. See 59.
12.4 DC Electrical Characteristics
Parameter
Conditions / Pin
Symbol
Min.
Typ.
Max.
Unit
Core operating voltage
CVDD
VDD
1.62
3.0
1.8
3.3
130
1.98
3.6
V
V
Peripheral operating voltage
Average core power supply
current
CIDD
150
mA
Average peripheral power
supply current
IDD
170
1
180
2
mA
mA
V
Average supply current
Stand-by Mode
Output levels VOH
Tri-state push pull
1 mA drive current.
VOH
0.80
VDD
0.92
VDD
IIN, QIN, TESTCLK,
MDO, MOVAL, MOSTRT,
MOCLK, BKERR,
DISECQ, STATUS
Output levels VOL
Tri-state push pull
1 mA drive current,
Pins as VOH.
0.2
0.4
V
Output level open drain
4 mA drive current.
6 mA drive current.
0.4
0.6
V
V
AGC, DATA1, IRQ,
GPP<2:0>
Input levels VIH CMOS
Input levels VIH CMOS
Input levels VIL CMOS
Input leakage Current
3.3V input
5.0V input
VIH
VIH
VIL
0.7VDD
0.7VDD
V
V
0.3VDD
10
V
VIN = 0 and VDD
µA
Table 11 - DC electrical characteristics
79
ZARLINK [ ZARLINK SEMICONDUCTOR INC ]
