R
Platform Flash XL High-Density Configuration and Storage Device
(1)
Table 25: Capacitance
Symbol
Parameter
Test condition
VIN = 0V
Min
6
Max
8
Unit
pF
CIN
Input capacitance
COUT
Output capacitance
VOUT = 0V
8
12
pF
Notes:
1. Sampled only, not 100% tested.
Table 26: DC Characteristics: Currents
Symbol
ILI
Parameter
Input leakage current
Test Condition
0V = VIN = VDDQ
0V = VOUT = VDDQ
Typ
–
Max
Unit
µA
1
1
ILO
Output leakage current
–
µA
Supply current asynchronous read
(F = 5 MHz)
E = VIL, G = VIH
14
16
mA
4 word
8 word
13
15
17
21
16
19
22
23
25
17
19
21
26
19
23
26
28
75
mA
mA
mA
mA
mA
mA
mA
mA
µA
Supply current synchronous read
(F = 40 MHz)
16 word
IDD1
Continuous
4 word
8 word
Supply current synchronous read
(F = 54 MHz)
16 word
Continuous
RP = VSS 0.2V
IDD2
IDD3
IDD4
Supply current (reset)
E = VDDQ 0.2V
K=VSS
Supply current (standby)
25
75
µA
Supply current (automatic standby)
E = VIL, G = VIH
25
8
75
20
25
20
25
µA
mA
mA
mA
mA
VPP = VPPH
Supply current (program)
Supply current (erase)
VPP = VDDQ
VPP = VPPH
VPP = VDDQ
10
8
IDD5(1)
10
Program/Erase in one Bank,
Asynchronous Read in another Bank
24
33
25
41
53
75
mA
mA
µA
(1),(2)
IDD6
Supply current (dual operations)
Program/Erase in one Bank,
Synchronous Read (Continuous f =
54 MHz) in another Bank
Supply current program/erase
suspended (standby)
E = VDDQ 0.2V
K=VSS
(1)
IDD7
V
PP = VPPH
PP = VDDQ
PP = VPPH
2
5
5
5
5
5
5
mA
µA
mA
µA
µA
µA
VPP supply current (program)
VPP supply current (erase)
V
0.2
2
(1)
IPP1
V
VPP = VDDQ
VPP = VDDQ
VPP = VDDQ
0.2
0.2
0.2
IPP2
VPP supply current (read)
(1)
IPP3
VPP supply current (standby)
Notes:
1. Sampled only, not 100% tested.
2. dual operation current is the sum of read and program or erase currents.
V
DD
DS617 (v3.0.1) January 07, 2010
www.xilinx.com
Product Specification
45
XILINX [ XILINX, INC ]
