R
Platform Flash XL High-Density Configuration and Storage Device
Maximum Rating
Stressing the device above the rating listed in Table 22 might cause permanent damage to the device. These are stress
ratings only, and proper operation of the device at these or any other conditions above those indicated in this specification
is not implied. Exposure to Absolute Maximum Rating conditions for extended periods can affect device reliability.
Table 22: Absolute Maximum Ratings
Value
Symbol
Parameter
Unit
Min
–40
–40
–
Max
85
TA
TBIAS
TJ
Ambient operating temperature
Temperature under bias
Junction temperature
Storage temperature
Input or output voltage
Supply voltage
°C
°C
°C
°C
V
85
125
125
4.2
2.5
3.8
10
TSTG
VIO
–65
–0.5
–0.2
–0.2
–0.2
–
VDD
VDDQ
VPP
IO
V
Input/output supply voltage
Program voltage
V
V
Output short circuit current
Time for VPP at VPPH
100
100
mA
hours
TVPPH
–
DC and AC Parameters
This section summarizes the operating measurement conditions, and the DC and AC characteristics of the device. The
parameters in the DC and AC characteristics tables that follow are derived from tests performed under the measurement
conditions summarized in Table 23. Designers should check that the operating conditions in their circuit match the operating
conditions when relying on the quoted parameters.
Table 23: Operating and AC Measurement Conditions
Parameter
Min
1.7
Max
2.0
Units
V
VDD supply voltage
VDDQ supply voltage
3.0
3.6
V
2.3
2.7
V
VPP supply voltage (Factory environment)
8.5
9.5
V
VPP supply voltage (Application environment)
Ambient operating temperature
Load capacitance (CL)
–0.4
–40
VDDQ+0.4
85
V
°C
pF
ns
V
30
Input rise and fall times
–
5
Input pulse voltages
0 to VDDQ
VDDQ/2
Input and output timing reference voltages
V
DS617 (v3.0.1) January 07, 2010
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Product Specification
43