R
Platform Flash XL High-Density Configuration and Storage Device
Table 24: Quality and Reliability Characteristics
Symbol
TDR
Description
Min
20
Max
Units
Years
Cycles
Volts
Data retention
–
–
–
NPE
Program/erase cycles (Endurance)
Electrostatic Discharge (ESD)
10,000(1)
2,000
VESD
Notes:
1. Program/erase cycles when V = V
. See Table 21, page 44 for program/erase cycles when V = V .
PPH
PP
DDQ
PP
X-Ref Target - Figure 22
VDDQ
VDDQ
2
0V
DS617_17_032708
Figure 22: AC Measurement I/O Waveform
X-Ref Target - Figure 23
VDDQ
VDD
VDDQ
22 kΩ
Device
Under
Test
22 kΩ
(1)
CL
0.1 µF
0.1 µF
DS617_18_101608
Notes:
1. C includes JIG capacitance.
L
Figure 23: AC Measurement Load Circuit
X-Ref Target - Figure 24
VDDQ
VDD
VDDQ
4.7 kΩ
Device
Under
Test
READY_WAIT
(1)
CL
0.1 µF
0.1 µF
DS617_19_101608
Notes:
1. C includes JIG capacitance.
L
Figure 24: Connecting the READY_WAIT Pin when Using the Device
DS617 (v3.0.1) January 07, 2010
Product Specification
www.xilinx.com
44
XILINX [ XILINX, INC ]
