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W25X40BV 参数 Datasheet PDF下载

W25X40BV图片预览
型号: W25X40BV
PDF下载: 下载PDF文件 查看货源
内容描述: 1M位, 2M位和4M位串行闪存4KB扇区和双I / O SPI [1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI]
分类和应用: 闪存
文件页数/大小: 51 页 / 1636 K
品牌: WINBOND [ WINBOND ]
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W25X10BV/20BV/40BV  
9.2.5 Read Status Register (05h)  
The Read Status Register instruction allows the 8-bit Status Register to be read. The instruction is  
entered by driving /CS low and shifting the instruction code “05h” into the DIO pin on the rising edge of  
CLK. The status register bits are then shifted out on the DO pin at the falling edge of CLK with most  
significant bit (MSB) first as shown in figure 6. The Status Register bits are shown in figure 3 and  
include the BUSY, WEL, BP2-BP0, TB and SRP bits (see description of the Status Register earlier in  
this datasheet).  
The Status Register instruction may be used at any time, even while a Program, Erase or Write Status  
Register cycle is in progress. This allows the BUSY status bit to be checked to determine when the  
cycle is complete and if the device can accept another instruction. The Status Register can be read  
continuously, as shown in Figure 6. The instruction is completed by driving /CS high.  
Figure 6. Read Status Register Instruction Sequence Diagram  
Publication Release Date: August 20, 2009  
- 17 -  
Preliminary -- Revision B  
 
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