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W25X40BV 参数 Datasheet PDF下载

W25X40BV图片预览
型号: W25X40BV
PDF下载: 下载PDF文件 查看货源
内容描述: 1M位, 2M位和4M位串行闪存4KB扇区和双I / O SPI [1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI]
分类和应用: 闪存
文件页数/大小: 51 页 / 1636 K
品牌: WINBOND [ WINBOND ]
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W25X10BV/20BV/40BV  
9.2.7 Read Data (03h)  
The Read Data instruction allows one more data bytes to be sequentially read from the memory. The  
instruction is initiated by driving the /CS pin low and then shifting the instruction code “03h” followed  
by a 24-bit address (A23-A0) into the DIO pin. The code and address bits are latched on the rising  
edge of the CLK pin. After the address is received, the data byte of the addressed memory location  
will be shifted out on the DO pin at the falling edge of CLK with most significant bit (MSB) first. The  
address is automatically incremented to the next higher address after each byte of data is shifted out  
allowing for a continuous stream of data. This means that the entire memory can be accessed with a  
single instruction as long as the clock continues. The instruction is completed by driving /CS high. The  
Read Data instruction sequence is shown in figure 8. If a Read Data instruction is issued while an  
Erase, Program or Write cycle is in process (BUSY=1) the instruction is ignored and will not have any  
effects on the current cycle. The Read Data instruction allows clock rates from D.C. to a maximum of  
fR (see AC Electrical Characteristics).  
Figure 8. Read Data Instruction Sequence Diagram  
Publication Release Date: August 20, 2009  
- 19 -  
Preliminary -- Revision B  
 
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