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W25X40BV 参数 Datasheet PDF下载

W25X40BV图片预览
型号: W25X40BV
PDF下载: 下载PDF文件 查看货源
内容描述: 1M位, 2M位和4M位串行闪存4KB扇区和双I / O SPI [1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI]
分类和应用: 闪存
文件页数/大小: 51 页 / 1636 K
品牌: WINBOND [ WINBOND ]
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W25X10BV/20BV/40BV  
9.2 INSTRUCTIONS  
The instruction set of the W25X10BV/20BV/40BV consists of nineteen basic instructions that are fully  
controlled through the SPI bus (see Instruction Set table). Instructions are initiated with the falling  
edge of Chip Select (/CS). The first byte of data clocked into the DIO input provides the instruction  
code. Data on the DIO input is sampled on the rising edge of clock with most significant bit (MSB) first.  
Instructions vary in length from a single byte to several bytes and may be followed by address bytes,  
data bytes, dummy bytes (don’t care), and in some cases, a combination. Instructions are completed  
with the rising edge of edge /CS. Clock relative timing diagrams for each instruction are included in  
figures 4 through 24. All read instructions can be completed after any clocked bit. However, all  
instructions that Write, Program or Erase must complete on a byte boundary (CS driven high after a  
full 8-bits have been clocked) otherwise the instruction will be terminated. This feature further protects  
the device from inadvertent writes. Additionally, while the memory is being programmed or erased, or  
when the Status Register is being written, all instructions except for Read Status Register will be  
ignored until the program or erase cycle has completed.  
9.2.1 Manufacturer and Device Identification  
MANUFACTURER ID  
(M7-M0)  
Winbond Serial Flash  
EFh  
(ID15-ID0)  
9Fh  
Device ID  
(ID7-ID0)  
ABh, 90h, 92h  
10h  
Instruction  
W25X10BV  
W25X20BV  
W25X40BV  
3011h  
3012h  
3013h  
11h  
12h  
- 14 -  
 
 
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