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W25X40BV 参数 Datasheet PDF下载

W25X40BV图片预览
型号: W25X40BV
PDF下载: 下载PDF文件 查看货源
内容描述: 1M位, 2M位和4M位串行闪存4KB扇区和双I / O SPI [1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI]
分类和应用: 闪存
文件页数/大小: 51 页 / 1636 K
品牌: WINBOND [ WINBOND ]
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W25X10BV/20BV/40BV  
9.2.3 Write Enable (06h)  
The Write Enable instruction (Figure 4) sets the Write Enable Latch (WEL) bit in the Status Register to  
a 1. The WEL bit must be set prior to every Page Program, Sector Erase, Block Erase, Chip Erase  
and Write Status Register instruction. The Write Enable instruction is entered by driving /CS low,  
shifting the instruction code “06h” into the Data Input (DI) pin on the rising edge of CLK, and then  
driving /CS high.  
Figure 4. Write Enable Instruction Sequence Diagram  
9.2.4 Write Disable (04h)  
The Write Disable instruction (Figure 5) resets the Write Enable Latch (WEL) bit in the Status Register  
to a 0. The Write Disable instruction is entered by driving /CS low, shifting the instruction code “04h”  
into the DIO pin and then driving /CS high. Note that the WEL bit is automatically reset after Power-up  
and upon completion of the Write Status Register, Page Program, Sector Erase, Block Erase and  
Chip Erase instructions.  
Figure 5. Write Disable Instruction Sequence Diagram  
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