欢迎访问ic37.com |
会员登录 免费注册
发布采购

W25X40BV 参数 Datasheet PDF下载

W25X40BV图片预览
型号: W25X40BV
PDF下载: 下载PDF文件 查看货源
内容描述: 1M位, 2M位和4M位串行闪存4KB扇区和双I / O SPI [1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI]
分类和应用: 闪存
文件页数/大小: 51 页 / 1636 K
品牌: WINBOND [ WINBOND ]
 浏览型号W25X40BV的Datasheet PDF文件第6页浏览型号W25X40BV的Datasheet PDF文件第7页浏览型号W25X40BV的Datasheet PDF文件第8页浏览型号W25X40BV的Datasheet PDF文件第9页浏览型号W25X40BV的Datasheet PDF文件第11页浏览型号W25X40BV的Datasheet PDF文件第12页浏览型号W25X40BV的Datasheet PDF文件第13页浏览型号W25X40BV的Datasheet PDF文件第14页  
W25X10BV/20BV/40BV  
8.2 WRITE PROTECTION  
Applications that use non-volatile memory must take into consideration the possibility of noise and  
other adverse system conditions that may compromise data integrity. To address this concern the  
W25X10BV/20BV/40BV provides several means to protect data from inadvertent writes.  
8.2.1 Write Protect Features  
Device resets when VCC is below threshold.  
Time delay write disable after Power-up.  
Write enable/disable instructions.  
Automatic write disable after program and erase.  
Software write protection using Status Register.  
Hardware write protection using Status Register and /WP pin.  
Write Protection using Power-down instruction.  
Upon power-up or at power-down the W25X10BV/20BV/40BV will maintain a reset condition while  
VCC is below the threshold value of VWI, (See Power-up Timing and Voltage Levels and Figure 25).  
While reset, all operations are disabled and no instructions are recognized. During power-up and after  
the VCC voltage exceeds VWI, all program and erase related instructions are further disabled for a  
time delay of tPUW. This includes the Write Enable, Page Program, Sector Erase, Block Erase, Chip  
Erase and the Write Status Register instructions. Note that the chip select pin (/CS) must track the  
VCC supply level at power-up until the VCC-min level and tVSL time delay is reached. If needed a pull-  
up resister on /CS can be used to accomplish this.  
After power-up the device is automatically placed in a write-disabled state with the Status Register  
Write Enable Latch (WEL) set to a 0. A Write Enable instruction must be issued before a Page  
Program, Sector Erase, Chip Erase or Write Status Register instruction will be accepted. After  
completing a program, erase or write instruction the Write Enable Latch (WEL) is automatically  
cleared to a write-disabled state of 0.  
Software controlled write protection is facilitated using the Write Status Register instruction and setting  
the Status Register Protect (SRP) and Block Protect (TB, BP2, BP1, and BP0) bits. These Status  
Register bits allow a portion or all of the memory to be configured as read only. Used in conjunction  
with the Write Protect (/WP) pin, changes to the Status Register can be enabled or disabled under  
hardware control. See Status Register for further information.  
Additionally, the Power-down instruction offers an extra level of write protection as all instructions are  
ignored except for the Release Power-down instruction.  
- 10 -  
 
 
 复制成功!