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W3H64M72E-ESC 参数 Datasheet PDF下载

W3H64M72E-ESC图片预览
型号: W3H64M72E-ESC
PDF下载: 下载PDF文件 查看货源
内容描述: 64M X 72 DDR2 SDRAM 208 PBGA多芯片封装 [64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 30 页 / 942 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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W3H64M72E-XSBX  
White Electronic Designs  
ADVANCED*  
AC TIMING PARAMETERS (continued)  
-55°C ≤ TA < +125°C; VCCQ = + 1.8V 0.1V, VCC = +1.8V 0.1V  
533Mbs CL4  
Symbol  
400Mbs CL3  
Unit  
Parameter  
Address and control input pulse width for each input  
Min  
0.6  
Max  
Min  
Max  
tIPW  
tISa  
0.6  
tCK  
ps  
ps  
ps  
ps  
ps  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tCK  
ns  
ns  
µs  
µs  
ns  
tCK  
ps  
tCK  
ps  
tCK  
ps  
500  
250  
500  
375  
2
600  
350  
600  
475  
Address and control input setup time  
Address and control input hold time  
tISb  
tIHa  
tIHb  
CAS# to CAS# command delay  
ACTIVE to ACTIVE (same bank) command  
ACTIVE bank a to ACTIVE bank b command  
ACTIVE to READ or WRITE delay  
Four Bank Activate period  
ACTIVE to PRECHARGE command  
Internal READ to precharge command delay  
Write recovery time  
Auto precharge write recovery + precharge time  
Internal WRITE to READ command delay  
PRECHARGE command period  
PRECHARGE ALL command period  
LOAD MODE command cycle time  
CKE low to CK, CK# uncertainty  
REFRESH to Active or Refresh to Refresh command interval  
Average periodic refresh interval (commercial)  
Average periodic refresh interval (industrial)  
Exit self refresh to non-READ command  
Exit self refresh to READ  
tCCD  
tRC  
2
55  
55  
10  
15  
tRRD  
tRCD  
tFAW  
tRAS  
tRTP  
tWR  
10  
15  
50  
40  
7.5  
15  
tWR + tRP  
7.5  
15  
50  
40  
70,000  
70,000  
7.5  
15  
tWR + tRP  
10  
15  
tDAL  
tWTR  
tRP  
tRPA  
tMRD  
tDELAY  
tRFC  
tREFI  
tREFIIT  
tXSNR  
tXSRD  
tlSXR  
tAOND  
tACN  
tAOFD  
tRP + tCK  
2
tIS +tIH + tCK  
127.5  
tRP + tCK  
2
tIS +tIH + tCK  
127.5  
70,000  
7.8  
3.9  
70,000  
7.8  
3.9  
tRPC(MIN) + 10  
tRFC(MIN) + 10  
200  
tIS  
2
tAC(MIN)  
2.5  
tAC(MIN)  
200  
tIS  
Exit self refresh timing reference  
ODT tum-on delay  
ODT turn-on  
ODT turn-off delay  
ODT tum-off  
2
2
2
tAC(MAX) + 1000  
2.5  
tAC(MAX) + 600  
tAC(MIN)  
2.5  
tAC(MAX) + 1000  
2.5  
t
tAC(MIN)  
tAC(MAX) + 600  
AOF  
tAC(MIN)  
+
2 x tCK  
tAC(MAX) + 1000  
2 x tCK  
tAC(MAX) + 1000  
+
tAC(MIN)  
+
2 x tCK  
tAC(MAX) + 1000  
2 x tCK  
tAC(MAX) + 1000  
+
ODT tum-on (power-down mode)  
ODT turn-off (power-down mode)  
tAONPD  
ps  
ps  
2000  
2000  
tAC(MIN)  
2000  
+
+
tAC(MIN)  
2000  
+
+
tAOFPD  
ODT to power-down entry latency  
ODT power-down exit latency  
ODT enable from MRS command  
Exit active power-down to READ command, MR[bit12=0]  
Exit active power-down to READ command, MR[bit12=1]  
Exit precharge power-down to any non-READ command  
CKE minimum high/low time  
tANPD  
tAXPD  
tMOD  
tXARD  
tXARDS  
tXP  
3
8
12  
2
6-AL  
2
3
3
8
12  
2
6-AL  
2
3
tCK  
tCK  
ns  
tCK  
tCK  
tCK  
tCK  
tCKE  
White Electronic Designs Corp. reserves the right to change products or specifications without notice.  
March 2006  
Rev. 1  
27  
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
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