VG4616321B/VG4616322B
262,144x32x2-Bit
Preliminary
CMOS Synchronous Graphic RAM
VIS
Absolute Maximum Rating
Symbol
Item
Rating
Unit
Note
VIN, VOUT
Input, Output Voltage
Power Supply Voltage
Operating Temperature
Storage Temperature
-0.3~VDD + 0.3
V
1
VDD, VDDQ
TOPR
-0.3~4.6
0~70
-55~150
260
V
°C
°C
°C
W
1
1
1
1
1
1
TSTG
TSOLDER
PD
Soldering Temperature(10s)
Power Dissipation
1
IOUT
Short Circuit Output Current
50
mA
Recommended D.C. Operating Conditions (Ta = 0~70°C)
Symbol
Parameter
Min.
Typ.
Max.
Unit
Note
VDD
Power Supply Voltage
3.0
3.3
3.6
3.6
V
2
2
2
2
2
2
2
2
VDDQ
VIH
VIL
Power Supply Voltage (for I/O Buffer)
LVTTL Input High Voltage
LVTTL Input LOW Voltage
Input Reference Voltage
3.0
2.0
3.3
V
V
V
V
V
V
V
-
-
VDD+ 0.3
0.8
-0.3
Vref
VIH
VIL
1.25
1.5
-
1.75
SSTL Input High voltage
VREF+0.2
-0.3
VDDQ+0.3
VREF+0.2
VREF+0.1
SSTL Input Low Voltage
-
VTT
SSTK Teruination Voltage
VREF-0.1
V
Note : the peak to peak AC noise on Vref may not exceed 2%. VREF (DC). Vtt of transmitting device
must track VREF of receiving device. Typically the value of VREF must be about 0.45 * VDDQ of
the transmitting device and VREF track Variations in VDDQ
.
Capacitance (VDD = 3.3V, f = 1MHz, Ta = 25°C)
Symbol
Parameter
Min.
Max.
Unit
CI
Input Capacitance
-
5
pF
CI/O
Input/Output Capacitance
-
7
pF
Note: These parameters are periodically sampled and are not 100% tested.
Document:1G5-0145
Rev.1
Page21
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
