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VG4616321BQ-6R 参数 Datasheet PDF下载

VG4616321BQ-6R图片预览
型号: VG4616321BQ-6R
PDF下载: 下载PDF文件 查看货源
内容描述: 262,144x32x2位CMOS同步图形RAM [262,144x32x2-Bit CMOS Synchronous Graphic RAM]
分类和应用: 内存集成电路动态存储器时钟
文件页数/大小: 82 页 / 1377 K
品牌: VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
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VG4616321B/VG4616322B  
262,144x32x2-Bit  
Preliminary  
CMOS Synchronous Graphic RAM  
VIS  
Note:  
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the  
device.  
2. All voltages are referenced to V  
.
SS  
3. These parameters depend on the cycle rate and these values are measured by the cycle rate under the minimum  
value of t and t . Input signals are changed one time during t . Assume that there are only one read/write  
CK  
RC  
CK  
cycle during t (min).  
RC  
4. These parameters depend on the output loading. Specified values are obtained with the output open.  
5. Assume minimum column address update cycle t  
(min).  
CCD  
6. Power-up sequence is described in Note 11.  
7. A.C. Test Conditions  
Reference Level of Output Signals  
Output Load  
1.4V / 1.4V  
Reference to the Under Output Load (B)  
Input Signal Levels  
3.0V / 0.0V  
1ns  
Transition Time (Rise and Fall) of Input Signals  
Reference Level of Input Signals  
1.4V  
3.3V  
1.4V  
1.2KW  
50  
W
ZO=50  
W
Output  
Output  
30pF  
30pF  
870W  
LVTTL D.C. Test Load (A)  
LVTTL A.C. Test Load (B)  
Document:1G5-0145  
Rev.1  
Page24  
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